Overview
MMSM Packaging Technology for High-Speed Hermetic Flip-Chip Components
Microsemi's Monolithic Microwave Surface Mount, or MMSM™ is a patented (US Patent No. 6,187,611) packaging technology employed to create high-speed hermetic flip-chip components. It eliminates ceramic and metal packages commonly used for components operating at frequencies up to 12GHz, or X band. Before MMSM, manufacturers of fixed microwave had no choice beyond ceramic or metal hermetic packages for these frequencies, because parasitic limitations prevent the use of plastics.
The MMSM process uses metallization and etching techniques to create semiconductor devices packaged during the fabrication of the wafer itself. Interconnections are made by precise photolithographic methods that eliminate wire bonding, another source of parasitic problems.
Microsemi MMSM Products
- PIN Diode Switch Elements, including multiple PIN Diodes in a complete SP2T RF switch
- PIN Diodes used in switching antennas
- Varactor Diodes for voltage controlled oscillators (VCOs)
- RF PIN Limiter Diodes for power amplifier protection
Ready to learn more? Contact your local Microsemi sales office today to find the right MMSM technologies and products for your design needs.
Resources
MMSM Resources
- Microwave Discretes Package Comparison
- "A Guide to Microwave Diode Package Styles and Their Performance": K. R. Philpot (Microsemi), High Frequency Electronics, February 2005
- "Microsemi puts broadband high-frequency diodes in smallest packages yet": EE Times, January 18, 2000
Overview
Gallium Nitride Technology for High-Power & High-Frequency Devices
Gallium Nitride (GaN) is a direct band gap semiconductor, with a wide band gap of 3.4 eV (electronvolt), 2.4x wider than Gallium Arsenide (GaAs) and 3x wider than Silicon. This makes GaN better suited for high-power and high-frequency devices, as it derives lower switching and conduction losses. In turn, this translates to lower size, weight and total solution cost to power and RF applications utilizing GaN.
Microsemi research in 2011 (see Enhancement Mode Gallium Nitride (eGaN) FET Characteristics under Long Term Stress) has demonstrated the stability of Enhanced Mode GaN devices at temperature and under radiation exposure.
GaN Benefits
- Higher power transistor than any other solid state solution, inlcuding Si BJT, LDMOS and GaAs
- Highest power density, bringing the smallest transistor size
- Excellent temperature stability
- Superior efficiency
Microsemi has a rich history in RF, microwave and millimeter wave solutions and a broad portfolio to address a wide range of RF applications. Explore our GaN portfolio:
- GaN Transistors for RF Amplifiers
- MiGaN Transistors for Aerospace Applications
Resources
Design Resources
- MiGaN FET Application note
- Gallium Nitride(GaN) +50V Power Transistors Optimum Size Power & Efficiency
- GaN and SiC RF Power Transistor Selection Guide
Microsemi GaN News
- Microsemi Extends Leadership in Differentiated Products by Introducing 13 New RF, Microwave and Millimeter Wave Devices at IMS 2015
- Microsemi 750 Watt GaN on SiC RF Power Transistor Delivers Unparalleled High-power Performance for Aviation Applications
- Microsemi Delivers S-Band RF Power Transistor for Air Traffic Control Radar Aviation Applications
- Microsemi Announces RF Transistor for Secondary Surveillance Radar Aviation Applications
- Microsemi Expands S-Band RF Power Transistor Family to Include High-Performance GaN-on-SiC Devices
In the News
- "What Techniques Boost PA Efficiency?": interview with Mark Faulkner (Microsemi), Microwaves & RF, October 17. 2014
- "GaN Power Transistors Major Advantages (pdf)": Jerry Chang (Microsemi) presentation at MTT-S 2014
- "GaN Power Transistors Major Advantages (video)": Jerry Chang (Microsemi) presentation at IMS 2014
- "Process Technologies Secure Key Applications": interview with Mark Faulkner (Microsemi), Microwaves & RF, Feb 16. 2012
- "Enhancement Mode Gallium Nitride (eGaN) FET Characteristics under Long Term Stress", GOMACTech11, March 24. 2011
- "AlGaN/GaN HFET Power Amplifier Integrated With Microstrip Antenna for RF Front-End Applications": Yongxi Qian et all, IEEE Transactions on Microwave Theory and Technicques, Vol 51, No. 2, February 2003
Overview
Why Power over Ethernet?
Delivering Power over Ethernet (PoE) reduces the cost of installation and maintenance of devices in remote locations (e.g. WLAN Access Points and IP Cameras), and enables providing centralized power backup to devices without the need to re-wire the AC infrastructure.
IEEE 802.3 Power over Ethernet
The Institute of Electrical and Electronic Engineers, or IEEE™ 802.3 Ethernet Working Group has been working on standardizing the delivery of power over Ethernet (PoE) cables since 1999. Microsemi has been involved since then in PoE, having participated in the first and second PoE Calls for Interest in the 802.3 Working Group, and since then in the standardization of 802.3af-2003, 802.3at-2009, and in the 803.bt Task Force. The 802.3bt standardization work started in 2013 and ratification is expected in early 2018.
IEEE 802.3 defined the following types of devices:
- Powered Device (PD): The consumer of power over Ethernet. Microsemi makes PoE PD ICs to receive power, Ideal Diode Bridges to minimize power losses on polarity rectification, and also PoE splitters, used to power non-PoE devices over Ethernet.
- Power Sourcing Equipment (PSE): Sends power over Ethernet, and can be of two types:
- Endspan PSE, or PoE Switch: PoE Integrated inside the Ethernet Switch. Microsemi has a very broad line of PoE PSE ICs. Microsemi also makes Outdoor PoE Switches and indoor PoE extenders.
- Midspan PSE, or PoE Injector: Unit placed between a non-PoE Ethernet Switch and the Powered Device. Microsemi has a large family of indoor and outdoor PoE Midspans.
Utilization of IEEE 802.3-compliant equipment for power delivery over Ethernet cables is critical, as adhering to the standard ensures:
- Equipment Safety: Power over Ethernet ensures safe delivery of power to PoE Powerable Devices (PD), without damaging non-compliant devices, and without damaging the cabling infrastructure already in place
- People Safety: PoE operates in voltages below 60V, and the PoE detection PD classification mechanisms performed by the Power Sourcing Equipment (PSE)
- Data Integrity: Power delivery over Ethernet cables does not cause data degradation or loss of data integrity, as long as the maximum number of energized cables in a bundle is respected, per IEEE 802.3 guidelines.
Power over HDBaseT
The HDBaseT Alliance standardizes the HDBaseT protocol, which allows extending HDMI links up to 100 m over Category 5E (CAT5E) or better cables. In 2011, the HDBaseT Alliance created the Power over HDBaseT (PoH) standard, which is backwards compatible with PoE, and extends the maximum power deliverable to 95W.
Energy Efficient PoE (EEPoE)
Microsemi's exclusive EEPoE technology cuts the power losses on Ethernet cables by 50%, through the utilization of all the copper available on cable when a Microsemi EEPoE PSE IC or Midspan is used. It is 100% compatible with IEEE802.3at, and the savings work with ANY IEEE 802.3at Type 2, Type 1 or IEEE 802.3af compliant PD. In practice, devices that consume 25.5W would consume less than 27.75W, instead of the worst case 30W when a non-EEPoE PSE is employed.
PoE/PoH Standards Capability Comparison
Capability | PoE/PoH Type 1 | PoE/PoH Type 2 | PoE Type 3* PoH Twin Type 2 |
PoH Twin Type 3 | PoE Type 4* |
PSE minimum Vout | 44V | 50V | 50V | 50V | 52V |
PSE Polarity | Switch: Flexible Midspan: Fixed |
Switch: Flexible Midspan: Fixed |
Flexible | Switch: Flexible Midspan: Fixed |
Fixed |
Power delivery over 4 pairs | No | No | Class 0-4: Optional Class 5-8: Mandatory |
Mandatory | Mandatory |
Extended Power | No | No | Yes | No | Yes |
Auto Class | No | No | Optional | Optional | Optional |
Low Minimum Power Signature (MPS) | No | No | Yes (PoE) No (PoH) |
No | Yes |
PSE Minimum Pout | 15.4W | 30W | 60W | 95W | 90-99W** |
PD Maximum Input Power | 13W | 25.5W | 51W | 71.25W-95W** | 68.3W-99W** |
Supported PSE classes*** | Class 0-3 | Class 0-4 | Class 0-6 (PoE) Class 0-4 (PoH) |
Class 0-4 | Class 7-8! |
Maximum bundle size at full power | N/A | 100 CAT5 | 100 CAT5 | 22 CAT5e 44 CAT6A 96 CAT7 |
TBD |
* PoE Classes 3 and 4 as defined in 802.3bt DRAFT circa July 2015. Final values may be different ** Extended capability depends on cable quality, cable length, PSE output voltage and the ability to support Auto Class *** PoE PSE base classes: 1 = 4W; 2 = 7W; 3 = 15.4W; 4 = 30W; 5 = 45W ; 6 = 60W; 7 = 75W ; 8 = 90W *** PoE PD base classes: 1 = 3.84W; 2 = 6.5W; 3 = 13W; 4 = 25.5W; 5 = 40W; 6 = 51W; 7 = 57W; 8 = 68.3W ! Task force considers the removal of Class 7 from Type 4 |
Microsemi is an innovator and thought leader in PoE technology and a major source of 802.3af, 802.3at and HDBaseT standards. Contact your local Microsemi sales office today to find the right PoE and PoH technologies and products for your design needs.
Resources
Learn More about PoE and PoH
- PoE and PoH for Carrier Applications
- Understanding IEEE 802.3at PoE Plus
- Cutting Power Consumption with Energy Efficient PoE (EEPoE)
- Next-Generation PoE: IEEE 802.3bt White Paper
Related Products
Terminology
IEEE802.3af-2003 - Original Power over Ethernet (PoE) standard from July 2003. Allowed sending 15.4 W of DC power with voltages between 44VDC and 57VDC and a maximum ongoing current of 350mA from the Power Sourcing Equipment (PSE) to the Powered Device (PD).. Required Category 3 or better structured cabling, with worst case resistance of 20ohms over 100m. 12.95W at a voltage range of 37VDC to 57VDC are available to the powered device, with the remaining15.4W-12.95W=2.45W being potentially dissipated on the cable.
IEEE802.3at-2009 – Latest IEEE802.3 PoE standard, also known as PoE+ or PoE plus, allows delivery of up to 30W or 60W over a single Category 5 or better cable, depending on the number of pairs utilized to deliver power. IEEE802.3at-2009 powered devices can consume up to 12.95W (type 1), 25.5W (type 2) or 51W (two collocated Type 2 interfaces).
Power over HDbaseT - PoE standard, also known as PoH, allows delivery of up to 100w over a single Category 5e/6 Ethernet cable.
PoE – Power over Ethernet, nomenclature of the multiple technologirs that allow delivery of power over Category 3 or better cables along with Ethernet data. Normally refers to the IEEE802.3af-2003 and IEEE802.3at-2009 standards, but can also refer to pre-standard equipment such as Microsemi's Power over LAN™ and Cisco’s Inline Power, EPoE or UPoE.
PD - a device powered by a PSE and thus consumes energy. Examples include wireless access points, IP Phones, and IP cameras.
Many powered devices have an auxiliary power connector for an optional, external, power supply. Depending on the PD design, some, none, or all power can be supplied from the auxiliary port, with the auxiliary port sometimes acting as backup power in case of PoE supplied power failure.
PSE – "Power Sourcing Equipment" - the device such that provides power on the Ethernet cable.
Midspan – intelligent power injectors that stand between a non-PoE Ethernet switch and the powered device, injecting power without affecting the data.
WLAN AP - "Wireless Local Area Network Access Points" are base stations for the wireless network. They transmit and receive radio frequencies for wireless enabled devices to communicate with.
IP Camera - "Internet protocol cameras" are a type of digital video camera which can send and receive data via a computer network and the Internet.
VoIP - "Voice over Internet Protocol" is a family of technologies, methodologies, communication protocols, and transmission techniques for the delivery of voice communications and multimedia sessions over Internet Protocol (IP) networks.
Thin Client - a client machine that relies on the server to perform the data processing. This can be either a dedicated thin client terminal or a regular PC with thin client software is used to send keyboard and mouse input to the server and receive screen output in return.
Zero Client - a server-based computing model in which the end user's computing device has no local storage. A zero client can be contrasted with a thin client, which retains the operating system and each device's specific configuration settings in flash memory.
Access Control Device – often referred to as a "reader," is a device that controls accessibility to a physical barrier where granting access can be electronically controlled.
UV – "Ultraviolet Light" This light wave can cause damaging burnt radiation, which is why Microsemi's PD-9001GO-ET is UV protected to survive UV intensive environments.
NEMA - defines standards for various grades of electrical enclosures typically used in industrial applications. Each is rated to protect against designated environmental conditions. The PD-9001GO-ET has the NEMA 4X rating, which defines similar protection as the IP66 rating. For typical outdoor applications, where submersion is not a characteristic of installation, a NEMA 4X enclosure will be the optimal choice.
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