JANSD2N3019S (#349812) |
Product Status
In Production |
Overview
This RHA level 2N3019 NPN leaded metal device is RAD hard qualified for high-reliability applications per MIL-PRF-19500/391. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. |
| Package Carrier: | Tray |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector to Emitter Saturation Voltage | VCE(sat) | 0.2 | V | ||
| Input Capacitance | Cin | 60 | pF | ||
| Output Capacitance | Co | 12 | pF |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector Current (dc) | IC | 1 | A | ||
| Collector to Base Voltage (Emitter Open) | VCBO | 140 | V | ||
| Collector-Emitter Voltage (Base Open) | VCEO | 80 | V | ||
| Emitter-Base Voltage (Collector Open) | VEBO | 7 | V | ||
| Junction Temperature (°C) | TJ | -65 | 200 | °C | |
| Power Dissipation | PD | 0.8 | W | ||
| Thermal Resistance, Junction to Ambient (°C/ | RθJA | 195 | °C/W | ||
| Thermal Resistance, Junction to Case (°C/W) | RθJC | 30 | °C/W |
| Alphanumeric Parameter | Value |
|---|---|
| Quality Level | JANS |
Resources
| Datasheets | |
|---|---|
 LDS-0098 Datasheet |
| App Notes | |
|---|---|
| MicroNote 050: Radiation Hardened Performance of Discrete Semiconductor Products |
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