Rad-Hard BJT (BiPolar Junction Transistor)
Overview
BJTs offer higher transconductance than MOSFETS and don't require separate gate drivers. A particular strength is that they are current amplifiers capable of very high current densities. They can be used as amplifiers, switches, and oscillators and are capable of very high frequency operation. They can also be used as temperature sensors and logarithmic converters.
Microsemi's broad offering of QPL qualified BJTs spans voltages from 10 V to 760 V, rated currents from 0.01 A to 50 A and power ratings from 0.15 W to 300 W. Maximum junction temperatures up to 200°C are available, as are many leaded and surface mount packing solutions.
Microsemi's broad offering of QPL qualified BJTs spans voltages from 10 V to 760 V, rated currents from 0.01 A to 50 A and power ratings from 0.15 W to 300 W. Maximum junction temperatures up to 200°C are available, as are many leaded and surface mount packing solutions.
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