1011GN-1600VG |
Product Status
Sampling |
Overview
The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output power with over 18.6 dB gain and greater than 70% drain efficiency at both 32us pulse width, 2% duty cycle, Mode-S ELM, and IFF pulse formats. The transistor is internally pre-matched for optimal performance and utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Best Size, Weight, and Power (SWaP) output stage designs can be achieved by taking advantage of the small footprint single-ended industry standard Gemini packaged device with single gate and drain bias feeds. |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 70 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 2 | % | ||
Frequency (GHz) | F | 1.03 | 1.09 | GHz | |
Gain | G | 18.6 | dB | ||
Output Power (W) | POUT | 1600 | W | ||
Pulse Width (PW) | τ | 32 | µs |
Resources
Datasheets | |
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1011GN-1600VG GaN Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Product Briefs | |
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1011GN L-Band GaN-on-SiC Transistors | |
1011GN-1600VG Product Brief |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories: