RF/Microwave GaN on SiC Power Devices, Pallets and Modules
Overview
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Featured GaN on SiC Power Devices, Pallets & Modules
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L-Band Avionics Output Stage
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L-Band Pulsed Primary Radar Output Stage
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S-Band Pulsed Primary Radar Output Stage
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C-Band Radar and Communications
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GaN RF Power Transistors Features and Benefits
- GaN High breakdown voltage provides Vdd to breakdown headroom
- GaN High junction temperatures provides high MTTF
- GaN on SiC HEMT provides Class AB deriving wide Pout dynamic range and good linearity
- GaN on SiC provides the highest power density
- GaN on SiC provides the smallest footprint and reduced weight
- GaN on SiC provides the highest power support and best efficiency
Resources
- GaN Transistor Selection Guide
- RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013
- RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013
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