RF/Microwave GaN on SiC Power Devices, Pallets and Modules
Overview
Microsemi's offers a broad line of GaN on SiC transistors for RF Power applications.GaN RF Power Transistors Features and Benefits
- GaN High breakdown voltage provides Vdd to breakdown headroom
- GaN High junction temperatures provides high MTTF
- GaN on SiC HEMT provides Class AB deriving wide Pout dynamic range and good linearity
- GaN on SiC provides the highest power density
- GaN on SiC provides the smallest footprint and reduced weight
- GaN on SiC provides the highest power support and best efficiency
GaN Transistor Selection Guide.png&w=300&h=157&q=100 "Radar-EW RF Front End")
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