1012GN-1000V |
Product Status
In Production |
Overview
| The 1012GN-1000V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 19 dB gain, 1000 W of pulsed RF output power at 32 ?s, and 2% duty cycle pulse format across the 1025 MHz to 1150 MHz band. The transistor has internal pre-match for optimal performance. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. The export classification is EAR-99. |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Efficiency (%) | nd | 65 | % | ||
| Drain Supply Voltage (dc) | VDD | 60 | V | ||
| Duty Cycle % | Duty Cycle (%) | 6 | % | ||
| Frequency (GHz) | F | 1.02 | 1 | GHz | |
| Gain | G | 18.1 | dB | ||
| Output Power (W) | POUT | 1000 | W | ||
| Pulse Width (PW) | τ | 20 | µs |
Resources
| Datasheets | |
|---|---|
 1012GN-1000V datasheet |
| App Notes | |
|---|---|
| Determining Maximum RF Output Power Rating |
|
| High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
| Literature | |
|---|---|
| GaN Transistor Selection Guide |
| Other | |
|---|---|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 |
|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
| RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
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