1214GN-700V |
Product Status
Sampling |
Overview
| The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 ?s pulse width, and 10% duty factor across the 960 MHz to 1215 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for the output stage of L-Band pulsed primary radar systems. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Efficiency (%) | nd | 63 | % | ||
| Drain Supply Voltage (dc) | VDD | 50 | V | ||
| Duty Cycle % | Duty Cycle (%) | 10 | % | ||
| Frequency (GHz) | F | 1.2 | 1 | GHz | |
| Gain | G | 16.5 | dB | ||
| Output Power (W) | POUT | 750 | W | ||
| Pulse Width (PW) | τ | 300 | µs |
Resources
| Datasheets | |
|---|---|
 1214GN-700V Datasheet |
| App Notes | |
|---|---|
| Determining Maximum RF Output Power Rating |
|
| High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
| Literature | |
|---|---|
| GaN Transistor Selection Guide |
| Other | |
|---|---|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 |
|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
| Product Briefs | |
|---|---|
| 1214GN Class AB GaN-on-SiC HEMT Transistors |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
| RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories:
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules -
RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules L-Band Pulsed Primary Radar Output Stage
