1011GN-1200V |
Product Status
In Production |
Overview
| The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at 32us, 2% duty cycle pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Efficiency (%) | nd | 75 | % | ||
| Drain Supply Voltage (dc) | VDD | 50 | V | ||
| Duty Cycle % | Duty Cycle (%) | 2 | % | ||
| Frequency (GHz) | F | 1.03 | 1 | GHz | |
| Gain | G | 20 | dB | ||
| Output Power (W) | POUT | 1200 | W | ||
| Pulse Width (PW) | τ | 32 | µs |
Resources
| Datasheets | |
|---|---|
 1011GN-1200V Datasheet |
| App Notes | |
|---|---|
| Determining Maximum RF Output Power Rating |
|
| High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
| Literature | |
|---|---|
| GaN Transistor Selection Guide |
| Other | |
|---|---|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 |
|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
| Product Briefs | |
|---|---|
| 1011GN L-Band GaN-on-SiC Transistors |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
| RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories:
