1214GN-50EP |
Product Status
In Production |
Overview
Key Features• 1200 MHz–1400 MHz, 50 W output power at 300 µs and 10% pulsing• Common source, class AB, 50 V bias voltage • >60% typical efficiency across the frequency band • Extremely compact size • Over 16 dB typical power gain • Excellent gain flatness • Ideal for radar, L-Band avionics, communications, and industrial applications • All-gold metallization and eutectic die attach for highest reliability • 50 ? IN/OUT lumped element, very small footprint, plug-and-play pallets available • Export classification: EAR-99 |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 60 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 1.2 | 1 | GHz | |
Gain | G | 15.9 | dB | ||
Output Power (W) | POUT | 58 | W | ||
Pulse Width (PW) | τ | 300 | µs |
Resources
Datasheets | |
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1214GN-50E, 1214GN-50EL, 1214GN-50EP Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Product Briefs | |
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1214GN Class AB GaN-on-SiC HEMT Transistors |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band