1011GN-125EP |
Product Status
In Production |
Overview
| The 1011GN-125E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transmitter driver transistor capable of providing over 18.5 dB power gain and 125 W of pulsed RF output power under several pulse formats, including mode-S ELM, across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. The hermetically sealed transistor is available in both the bolt-down flange 55-QQ package and the earless solder-down flange 55-QQP package styles, as well as mounted on a compact 50 ? IN/OUT pallet. Designed specifically for IFF, Mode-S, TCAS, and avionics secondary radar applications, the transistor devices utilize all-gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99. |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Efficiency (%) | nd | 72 | % | ||
| Drain Supply Voltage (dc) | VDD | 50 | V | ||
| Duty Cycle % | Duty Cycle (%) | 10 | % | ||
| Frequency (GHz) | F | 1.03 | 1 | GHz | |
| Gain | G | 18.75 | dB | ||
| Output Power (W) | POUT | 150 | W | ||
| Pulse Width (PW) | τ | 1000 | µs |
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Resources
| Datasheets | |
|---|---|
 1011GN-125E, 1011GN-125EL, 1011GN-125EP Datasheet |
| App Notes | |
|---|---|
| Determining Maximum RF Output Power Rating |
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| High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
| Literature | |
|---|---|
| GaN Transistor Selection Guide |
| Other | |
|---|---|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 |
|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
| Product Briefs | |
|---|---|
| 1011GN L-Band GaN-on-SiC Transistors |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
| RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories:
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules -
RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band
