0912GN-120EP |
Product Status
In Production |
Overview
120 Watts, 50 Volts, 960-1215MHz E Class Earless Driver GaN Transistor
Key Features
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Electrical Rating | Symbol | Min | Typ | Max | Unit |
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Drain Efficiency (%) | nd | 65 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 0.96 | 1 | GHz | |
Gain | G | 18.4 | dB | ||
Output Power (W) | POUT | 139 | W | ||
Pulse Width (PW) | τ | 128 | µs |
Resources
Datasheets | |
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App Notes | |
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Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
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This part can be found in the following product categories:
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules
General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules