0912GN-120E |
Product Status
In Production |
Overview
120 Watts, 50 Volts, 960-1215MHz E Class Earless Driver GaN Transistor
Features
|
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Efficiency (%) | nd | 65 | % | ||
| Drain Supply Voltage (dc) | VDD | 50 | V | ||
| Duty Cycle % | Duty Cycle (%) | 10 | % | ||
| Frequency (GHz) | F | 0.96 | 1 | GHz | |
| Gain | G | 18.4 | dB | ||
| Output Power (W) | POUT | 139 | W | ||
| Pulse Width (PW) | τ | 128 | µs |
Resources
| Datasheets | |
|---|---|
 0912GN-120E, 0912GN-120EL, 0912GN-120EP Datasheet |
| App Notes | |
|---|---|
| Determining Maximum RF Output Power Rating |
|
| High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
| Literature | |
|---|---|
| GaN Transistor Selection Guide |
| Other | |
|---|---|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 |
|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
| RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
This part can be found in the following product categories:
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band -
RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
