0510GN-25-CP |
Product Status
In Production |
Overview
The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW RF power applications. The transistor is housed in a Ceramic SMT package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.Features
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Electrical Rating | Symbol | Min | Typ | Max | Unit |
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Drain Efficiency (%) | nd | 61 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 100 | % | ||
Frequency (GHz) | F | 0.05 | 1 | GHz | |
Gain | G | 16 | dB | ||
Output Power (W) | POUT | 28 | W |
Resources
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Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
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This part can be found in the following product categories:
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules
General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band