1214GN-120EP |
Product Status
In Production |
Overview
The 1214GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 ?S pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is available in two package types, as well as mounted on a compact footprint 50? IN/OUT pallet, and is specifically designed for L-band pulsed primary radar applications. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99. |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
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Drain Efficiency (%) | nd | 65 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 1.2 | 1 | GHz | |
Gain | G | 17.2 | dB | ||
Output Power (W) | POUT | 130 | W | ||
Pulse Width (PW) | τ | 300 | µs |
Resources
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Product Briefs | |
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Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
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This part can be found in the following product categories:
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules
General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band