1214GN-600VHE |
Product Status
In Production |
Overview
The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300?s pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
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Drain Efficiency (%) | nd | 63 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 1.2 | 1 | GHz | |
Gain | G | 17.5 | dB | ||
Output Power (W) | POUT | 645 | W | ||
Pulse Width (PW) | τ | 300 | µs |
Resources
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Product Briefs | |
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Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
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Ordering
This part can be found in the following product categories:
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules
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RF, Microwave & Millimeter Wave
RF/Microwave Power Transistor Products
RF/Microwave GaN on SiC Power Devices, Pallets and Modules
L-Band Pulsed Primary Radar Output Stage