0912GN-300V |
Product Status
In Production |
Overview
| The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal prematch for optimal performance. This hermetically sealed transistor is designed for avionic applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. |
ROHS| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Efficiency (%) | nd | 60 | % | ||
| Drain Supply Voltage (dc) | VDD | 50 | V | ||
| Duty Cycle % | Duty Cycle (%) | 10 | % | ||
| Frequency (GHz) | F | 0.96 | 1 | GHz | |
| Gain | G | 17 | dB | ||
| Output Power (W) | POUT | 320 | W | ||
| Pulse Width (PW) | τ | 128 | µs |
Resources
| Datasheets | |
|---|---|
 0912GN-300V Datasheet |
| App Notes | |
|---|---|
| Determining Maximum RF Output Power Rating |
|
| High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
| Literature | |
|---|---|
| GaN Transistor Selection Guide |
| Other | |
|---|---|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 |
|
| RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
| RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories:
