App Notes
Documents
Document Name | Size | Published | Modified | |
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MicroNote 122: Transient Protection across High Data Rate & RF Lines | 223.4 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 123: Effective use of Space Saving TVSArrays | 102.07 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 125: How to Select a Transient Voltage Suppressor | 104.92 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 108: Determining Clamping Voltages for Pulse Currents | 510.77 kB | 06/04/2018 | 07/10/2018 | |
MicroNote 106: Crowbars and Clamps | 892.12 kB | 06/04/2018 | 07/10/2018 | |
MicroNote 107: Cross Referencing TVS Devices | 694.72 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 105: What is a Thyristor Surge Protector Device | 166.57 kB | 06/04/2018 | 06/05/2018 | |
MicroNote 010: How to Quickly Obtain Spice Data | 117.85 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 116: Protection at a Transformer | 124.62 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 112: Series Stacking TVS devices for Higher Current | 251.7 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 115: Derating TVS at Elevated Temp for varying Pulse Widths | 262.66 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 104: Using the Power vs Time Curve | 933.2 kB | 06/04/2018 | 07/10/2018 | |
MicroNote 117: Protecting USB Data I/O Ports | 178.96 kB | 06/04/2018 | 07/02/2018 | |
MicroNote 114: Derating TVS devices for Higher Junction Temp | 479.12 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 111: Parasitic Lead Inductance in TVS | 286.73 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 110: Parasitic Capacitance in TVS PARASITIC CAPACITANCE IN TRANSIENT VOLTAGE SUPPRESSORS & LOW CAPACITANCE OPTIONS A silicon transient voltage suppressor (TVS) has an inherent capacitance resulting from mobile electrons and holes on opposite sides of the p-n junction and depletion layer. This is equivalent to parallel plates having an intervening dielectric layer of silicon in between thus providing all the elements of a capacitor. When reverse bias is applied, the depletion region widens and decreases the capacitance as the voltage bias is increased. Low voltage TVS devices have a high concentration of dopant resulting in a narrow depletion region thus producing higher capacitance values. Progressively higher voltage devices have exponentially decreasing levels of dopant and wider depletion regions with a corresponding reduction in capacitance. Figure 1 depicts capacitance versus rated Working Standoff Voltage (VWM) for both unidirectional and bidirectional devices in an example 1500 W rated series of TVSs. The bidirectional TVSs have two p-n junctions in series that further reduces capacitance.
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808.36 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 109: Protecting from ESD | 129.64 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 103: What is a TVS? | 441.32 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 102: An Introduction to TVS Devices | 684.71 kB | 06/04/2018 | 05/26/2020 | |
MicroNote 100: MicroNote Index and Summary | 116.74 kB | 06/04/2018 | 06/04/2018 |