Gallium Nitride (GaN) Technology
Overview
Gallium Nitride Technology for High-Power & High-Frequency Devices
Gallium Nitride (GaN) is a direct band gap semiconductor, with a wide band gap of 3.4 eV (electronvolt), 2.4x wider than Gallium Arsenide (GaAs) and 3x wider than Silicon. This makes GaN better suited for high-power and high-frequency devices, as it derives lower switching and conduction losses. In turn, this translates to lower size, weight and total solution cost to power and RF applications utilizing GaN.
Microsemi research in 2011 (see Enhancement Mode Gallium Nitride (eGaN) FET Characteristics under Long Term Stress) has demonstrated the stability of Enhanced Mode GaN devices at temperature and under radiation exposure.
GaN Benefits
- Higher power transistor than any other solid state solution, inlcuding Si BJT, LDMOS and GaAs
- Highest power density, bringing the smallest transistor size
- Excellent temperature stability
- Superior efficiency
Microsemi has a rich history in RF, microwave and millimeter wave solutions and a broad portfolio to address a wide range of RF applications. Explore our GaN portfolio:
- GaN Transistors for RF Amplifiers
- MiGaN Transistors for Aerospace Applications
Resources
Design Resources
- MiGaN FET Application note
- Gallium Nitride(GaN) +50V Power Transistors Optimum Size Power & Efficiency
- GaN and SiC RF Power Transistor Selection Guide
Microsemi GaN News
- Microsemi Extends Leadership in Differentiated Products by Introducing 13 New RF, Microwave and Millimeter Wave Devices at IMS 2015
- Microsemi 750 Watt GaN on SiC RF Power Transistor Delivers Unparalleled High-power Performance for Aviation Applications
- Microsemi Delivers S-Band RF Power Transistor for Air Traffic Control Radar Aviation Applications
- Microsemi Announces RF Transistor for Secondary Surveillance Radar Aviation Applications
- Microsemi Expands S-Band RF Power Transistor Family to Include High-Performance GaN-on-SiC Devices
In the News
- "What Techniques Boost PA Efficiency?": interview with Mark Faulkner (Microsemi), Microwaves & RF, October 17. 2014
- "GaN Power Transistors Major Advantages (pdf)": Jerry Chang (Microsemi) presentation at MTT-S 2014
- "GaN Power Transistors Major Advantages (video)": Jerry Chang (Microsemi) presentation at IMS 2014
- "Process Technologies Secure Key Applications": interview with Mark Faulkner (Microsemi), Microwaves & RF, Feb 16. 2012
- "Enhancement Mode Gallium Nitride (eGaN) FET Characteristics under Long Term Stress", GOMACTech11, March 24. 2011
- "AlGaN/GaN HFET Power Amplifier Integrated With Microstrip Antenna for RF Front-End Applications": Yongxi Qian et all, IEEE Transactions on Microwave Theory and Technicques, Vol 51, No. 2, February 2003