App Notes
Documents
Document Name | Size | Published | Modified | |
---|---|---|---|---|
AN-19 LX1672 Design Reference Guide | 258.55 kB | 11/30/-1 | 05/21/2018 | |
Micronote 1910: Microsemi Power Modules with Phase Change Material | 7.58 MB | 02/27/2018 | 05/21/2018 | |
Micronote 1911: Mounting Instructions for SP6 Low Inductance Power Module | 1.77 MB | 05/21/2018 | 05/21/2018 | |
LX3301A LX3302A Auto Calibration User Guide | Unknown | 05/25/2018 | 05/25/2018 | |
MicroNote 120: Selecting TVS with PPP and Waveform Considerations | 194.76 kB | 06/01/2018 | 06/01/2018 | |
MicroNote 101: A Primer on TVS Devices | 99.66 kB | 06/01/2018 | 06/01/2018 | |
MicroNote 113: Parallel Stacking TVS devices for Higher Current | 96.8 kB | 06/01/2018 | 06/01/2018 | |
MicroNote 118: TVS/Chip Product Overview | 161.36 kB | 06/01/2018 | 06/01/2018 | |
MicroNote 121: Protecting Data I/O ports with TVSArrays | 140.76 kB | 06/01/2018 | 06/01/2018 | |
MicroNote 130: Overall TVS Selection | 395.49 kB | 06/01/2018 | 06/01/2018 | |
MicroNote 109: Protecting from ESD | 129.64 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 116: Protection at a Transformer | 124.62 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 125: How to Select a Transient Voltage Suppressor | 104.92 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 126: Lightning Protection for Aircraft per RTCA/DO-160D for ARINC 429 Protocol | 211.39 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 010: How to Quickly Obtain Spice Data | 117.85 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 100: MicroNote Index and Summary | 116.74 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 103: What is a TVS? | 441.32 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 107: Cross Referencing TVS Devices | 694.72 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 110: Parasitic Capacitance in TVS PARASITIC CAPACITANCE IN TRANSIENT VOLTAGE SUPPRESSORS & LOW CAPACITANCE OPTIONS A silicon transient voltage suppressor (TVS) has an inherent capacitance resulting from mobile electrons and holes on opposite sides of the p-n junction and depletion layer. This is equivalent to parallel plates having an intervening dielectric layer of silicon in between thus providing all the elements of a capacitor. When reverse bias is applied, the depletion region widens and decreases the capacitance as the voltage bias is increased. Low voltage TVS devices have a high concentration of dopant resulting in a narrow depletion region thus producing higher capacitance values. Progressively higher voltage devices have exponentially decreasing levels of dopant and wider depletion regions with a corresponding reduction in capacitance. Figure 1 depicts capacitance versus rated Working Standoff Voltage (VWM) for both unidirectional and bidirectional devices in an example 1500 W rated series of TVSs. The bidirectional TVSs have two p-n junctions in series that further reduces capacitance.
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808.36 kB | 06/04/2018 | 06/04/2018 | |
MicroNote 111: Parasitic Lead Inductance in TVS | 286.73 kB | 06/04/2018 | 06/04/2018 |