Datasheets
Documents
Document Name | Size | Published | Modified | |
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LDS-0228-1 Datasheet | 231.96 kB | 02/06/2013 | 02/09/2017 | |
APTMC60TLM55CT3AG Rev3 Datasheet | 419.66 kB | 12/12/2012 | 03/15/2017 | |
PD81001 Datasheet | Unknown | 10/14/2014 | 03/17/2017 | |
APT2X30D20J, APT2X31D20J Datasheet | 144.87 kB | 11/30/-1 | 04/10/2017 | |
MG1041-MG1059 GUNN Diodes Anode Heat Sink Datasheet
Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.
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169.8 kB | 11/30/-1 | 04/13/2017 | |
MG1001-MG1061 GUNN Diodes Cathode Heat Sink Datasheet
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. MDT Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5–110 GHz.
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204.4 kB | 11/30/-1 | 04/13/2017 | |
MO86728-MO9096 GUNN Transceivers Fixed Frequency Datasheet
Microsemi’s waveguide output transceivers are a reliable source of microwave power for speed and motion detection applications. The transceivers are a fully integrated module, with a Gunn diode mounted in the cavity for the transmitter and one or two Schottky barrier diodes in the receiver. An IF output is generated whose frequency is proportional to the target’s velocity. With the two-mixer design, the direction-of-motion is obtained as a phase difference between the two IF outputs.
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152.88 kB | 11/30/-1 | 04/13/2017 | |
MO8651-MO9205 GUNN Oscillators Fixed Frequency Datasheet | 199.6 kB | 11/30/-1 | 04/13/2017 | |
MO87108-MO9405 GUNN Oscillators VOltage Controlled Datasheet | 145.13 kB | 11/30/-1 | 04/13/2017 | |
MO87127-MO9140 GUNN Transceivers Voltage Controlled Datasheet | 139.65 kB | 11/30/-1 | 04/13/2017 | |
0510GN-25-CP Datasheet | 731.89 kB | 04/19/2017 | 04/19/2017 | |
1N2804B-1N2846RB and 1N4557B-1N4564RB Datasheet | 561.6 kB | 11/30/-1 | 04/19/2017 | |
DC35GN-15-Q4 Datasheet
The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.
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1.48 MB | 04/20/2017 | 04/20/2017 | |
0912GN-15E, 0912GN-15L, 0912GN-15EP Datasheet
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370.09 kB | 04/20/2017 | 04/20/2017 | |
0912GN-50LE, 0912GN-50LEL, 0912GN-50LEP Datasheet
E Class Earless Driver GaN Transistor
Features
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350.87 kB | 04/20/2017 | 04/20/2017 | |
1011GN-125E, 1011GN-125EL, 1011GN-125EP Datasheet | 447.45 kB | 04/20/2017 | 04/20/2017 | |
1011GN-250E, 1011GN-250EL, 1011GN-250EP Datasheet | 424.21 kB | 04/20/2017 | 04/20/2017 | |
1214GN-120E, 1214GN-120EL, 1214GN-120EP Datasheet | 483.13 kB | 04/20/2017 | 04/20/2017 | |
1416GN-120E, 1416GN-120-EL, 1416GN-120-EP Datasheet | 380.2 kB | 05/20/2016 | 04/20/2017 | |
0912GN-500LV Datasheet | 545.97 kB | 04/20/2017 | 04/20/2017 |