Datasheets
Documents
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1214GN-550V DS Datasheet The 1214GN-550V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT trsnsistor capable of providing over 17 dB gain, 550 Watts of pulsed RF output power at 300µs pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. |
140.35 kB | 07/08/2013 | 07/17/2013 |
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1214GN-550Vr3 Datasheet | 140.35 kB | 08/22/2013 | 08/22/2013 |
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1214GN-600VHE Datasheet 1214GN-600VHE data sheet |
441.88 kB | 05/13/2015 | 05/13/2015 |
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1214GN-650V Datasheet | 207.93 kB | 05/02/2017 | 05/02/2017 |
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1214GN-700V Datasheet | 379.25 kB | 04/24/2017 | 04/24/2017 |
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1243 11222010 31201 AM mplad130kp Datasheet | 246.89 kB | 11/30/-1 | 11/30/-1 |
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1243 11222010 31244 AM mplad130kp Datasheet | 246.89 kB | 11/30/-1 | 11/30/-1 |
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1416GN-120E, 1416GN-120-EL, 1416GN-120-EP Datasheet | 380.2 kB | 05/20/2016 | 04/20/2017 |
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1416GN-600V Datasheet | 226.23 kB | 04/20/2017 | 04/20/2017 |
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1517-110M R2 Datasheet | 113.49 kB | 11/30/-1 | 11/30/-1 |
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1517-20M R2 Datasheet | 89.11 kB | 11/30/-1 | 11/30/-1 |
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1517-250M R1 Datasheet | 111 kB | 11/30/-1 | 11/30/-1 |
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15KPA TVS Family Datasheet
This device clamps dangerous high-voltage short-term transients such as those produced by the secondary effects of lightning strikes, providing circuit protection to several class levels in the IEC61000-4-5 specification. Clamping time is virtually instantaneous. It also provides protection from transients caused by inductive load dumps, induced RFI, and ESD, providing protection to IEC61000-4-2 and -4-4.
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452.89 kB | 05/31/2013 | 10/01/2015 |
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1617-35 Datasheet | 14.1 kB | 11/30/-1 | 11/30/-1 |
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1618-35 Datasheet | 289.43 kB | 11/30/-1 | 11/30/-1 |
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1718-32L Datasheet | 179.44 kB | 11/30/-1 | 11/30/-1 |
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1719-20 Datasheet | 180.23 kB | 11/30/-1 | 11/30/-1 |
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1719-35 Datasheet | 226.53 kB | 11/30/-1 | 11/30/-1 |
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1819-35 Datasheet | 203.34 kB | 11/30/-1 | 11/30/-1 |
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1N100A Gold Bonded Germanium Diodes Datasheet | 62.05 kB | 11/30/-1 | 04/18/2016 |
