Si High Speed Switching PIN

Overview

Description

Microsemi offers Ceramic and Surface Mount packages options for its High Speed PIN Diodes.

GC4200 Series
The Ceramic Packaged GC4200 series are high speed (cathode base) PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.
These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The GC4200 series will operate with as little as +10 mA forward bias. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements.

Datasheet

GMP4200 Series
The GMP4200 series of surface mount diodes are specifically design for high volume surface mount applications. The GigaMite design is optimized for improved electrical and thermal performance over standard plastic package technology. The result is higher frequency coverage and better power handling than comparable plastic packages. Product parameters have been optimized for broadband switching and attenuator applications.
The package parasitics provide smooth non-resonant functionality through 5 GHz. Microsemi utilizes high quality dielectric materials resulting in low loss and broadband performance.

Datasheet

MPP4200 Series
The MPP4200 Series utlizes the new and unique monolithic MMSM technology. MMSM is based on package/device integration at the wafer fabrication level. Since the cathode and anode interconnections utlizae precision photolithographic techniques rather than wire bonds, parasitic package inductance is tightly controlled. The package parasitics provide smooth non-resonant functionality through X Band.
All GMP, GC and MPP series of PIN diodes meets RoHS requirements per EU Directive 2002/95/EC.

The SM1000 series of ‘MELF’ high power PIN diodes are hermetically sealed surface mount packaged devices with full face bonded chips for low inductance construction. The MELF ceramic package has square end terminations which are ideal for surface mount and pick and place operations. The PIN diode chips are coated with a special hard glass passivation which is required for high power applications and to enhance the reliability resulting in MTBFs of greater than one million hours. RoHS compliant versions of these products meet RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements.

Datasheet

Features

Available as packaged devices, as chips for hybrid applications or as surface mount
Low Loss
Suitable for application to 18Ghz (ceramic) or 5Ghz (GigaMite), X Band (MMSM) or 2Ghz (MELF)
High Speed
Low Insertion Loss
High Isolation
RoHS Compliant
Non-Magnetic MELF versions available

Selection Table

Ceramic Package Styles 00, 30, 35 and 115

MODEL NUMBER	BREAKDOWN VOLTAGE VB@10uA(MIN)(V)	JUNCTION CAPACITANCE CJ@-10V (MAX) (pF)	SERIES RESISTENCE (Rs@20mA 1GHz) (MAX) (Ohms)	CARRIER LIFETIME TL (IR=6mA IF=10mA) (Typ) (nS)	THERMAL RESISTANCE (MAX) (°C/W)
GC4270	70	0.06	1.5	100	80
GC4271	70	0.1	1	100	70
GC4272	70	0.2	0.8	100	70
GC4273	70	0.3	0.7	100	60
GC4274	70	0.4	0.6	100	50
GC4275	70	0.5	0.5	100	40
GC4210	100	0.06	1.5	200	80
GC4211	100	0.1	1	200	70
GC4212	100	0.2	0.75	200	70
GC4213	100	0.3	0.6	200	60
GC4214	100	0.4	0.5	200	50
GC4215	100	0.5	0.35	200	40
GC4220	250	0.06	2.5	500	80
GC4221	250	0.1	2	500	70
GC4222	250	0.2	1.5	500	70
GC4223	250	0.3	1	500	60
GC4224	250	0.4	0.8	500	50
GC4225	250	0.5	0.6	500	40

SMT Package Styles

Model Number	V_B(V) I_R=10μA (Min)	C_T(pF) V_R=10V (Max)	C_T(pF) V_R=50V (Max)	R_S(Ω) I_F=1mA (Typ)	R_S(Ω) I_F=20mA (Max)	R_S(Ω) I_F=100mA (Max)	T_L(nS) (Typ)	Θ (˚C/W) (Typ)	Pkg
MPP4204	25	0.15					20		MMSM
SM1003-M1 SMX1003-M1 SMX1003MR-M1	35		1.2@20V		0.5 @50mA	0.1 @200mA	600	25	MELF MELF ROHS Non-Magnetic
MPP4202	50	0.10			2.8		50		MMSM
MPP4203	50	0.15			3.0		50		MMSM
MPP4201	70	0.15			2.5		150		MMSM
MPP4205	70	0.20		7-16			150		MMSM
GMP4201-GM1	75	0.18	-	2.3	1.2	-	100	50	GigaMite
GMP4202-GM1	75	0.28	-	1.8	1.0	-	150	50	GigaMite
GMP4211-GM1	100	0.18	-	5.5	2.4	-	250	50	GigaMite
GMP4212-GM1	100	0.28	-	4.2	1.8	-	300	40	GigaMite
GMP4215-GM1	100	0.60	-	1.0	0.5	-	400	40	GigaMite
GMP4235-GM1	250	0.60	-	2.5	0.8	-	500	35	GigaMite
GMP4232-GM1	300	-	0.35	2.5	-	1.4	1000	25	GigaMite

Applications

Ceramic and SMT Package Applications

RF / Microwave Switching
Duplexers
Digital Phase Shifting
Phase Array Radar

SMT Package Applications

WLAN Access Points
Cellular Infrastructure
Wireless Backhaul
Receiver Protection Circuits
Broadband Switching
Economy Switching
RF Attenuators

The GC4200 ceramic packaged series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4200 series are also used as passive and active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators.
The MPP4200 series can be used in RF circuit as an on/off element, as a switch or as a current controlled resistor in attenuators extending over the frequency range from UHF to X Band.

Resources