SiC Diode Module
Overview
Silicone Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes.SiC Schottky Diode Features
- Essentially zero forward and reverse recovery = reduced switch and diode switching losses
- Temperature independent switching behavior = stable high temperature performance
- Positive temperature coefficient of VF = ease of parallel operation
- Usable 175°C Junction Temperature = safely operate at higher temperatures
SiC Schottky Diode Benefits
- Improved System Efficiency
- Higher Reliability
- Lower System Switching Losses
- Lower System Cost
- Smaller EMI Filter
- Smaller Magnetic Components
- Smaller Heat-Sink
- Smaller Switches, Eliminate Snubbers
- Reduced System Size
- Fewer/Smaller Components
Microsemi SiC Schottky Diode Module Advantages
- Industry Leading integration and packaging: shrink system size and weight, while reducing total systems costs.
|
VRRM (V) |
Module |
IF (A) |
VF (V) Tj=25C |
Package |
Anti-Parallel Configuration P/N |
Parallel Configuration P/N |
|
600 |
Dual |
20 |
1.6 |
SOT-227 |
||
|
30 |
1.6 |
SOT-227 |
||||
|
40 |
1.6 |
SOT-227 |
||||
|
50 |
1.6 |
SOT-227 |
||||
|
60 |
1.6 |
SOT-227 |
||||
|
90 |
1.6 |
SP1 |
- |
|||
|
1200 |
Dual |
20 |
1.6 |
SOT-227 |
||
|
40 |
1.6 |
SOT-227 |
||||
|
50 |
1.6 |
SOT-227 |
||||
|
60 |
1.6 |
SOT-227 |
||||
|
VRRM(V) |
Module |
IF(A) |
VF(V) |
Package |
Full Bridge Configuration P/N |
|
|
600 |
Full |
20 |
1.6 |
SP1 |
|
|
|
40 |
1.6 |
SP1 |
|
|||
|
40 |
1.6 |
SOT-227 |
|
|||
|
1200 |
Full |
10 |
1.6 |
SOT-227 |
|
|
|
20 |
1.6 |
SP1 |
|
|||
|
20 |
1.6 |
SOT-227 |
|
|||
|
40 |
1.6 |
SP1 |
|
|||
|
40 |
1.6 |
SOT-227 |
|
Applications
SiC Schottky Diode Module Applications
- PFC
- Output Rectification
- Solar Inverter
- Motor Control
- Snubber Diode
