SiC Schottky Diodes

Overview

Silicone Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes.

SiC Schottky Diode Features

Essentially zero forward and reverse recovery = reduced switch and diode switching losses
Temperature independent switching behavior = stable high temperature performance
Positive temperature coefficient of VF = ease of parallel operation
Usable 175°C Junction Temperature = safely operate at higher temperatures

SiC Schottky Diode Benefits

Improved System Efficiency
Higher Reliability
Lower System Switching Losses
Lower System Cost
- Smaller EMI Filter
- Smaller Magnetic Components
- Smaller Heat-Sink
- Smaller Switches, Eliminate Snubbers
Reduced System Size
- Fewer/Smaller Components

Microsemi SiC Schottky Diode Advantages

Superior Passivation Technology: leads to higher reliability. Microsemi thin film passivation applied in the wafer fab vs. competitors’ spin on passivation applied post wafer fab.
Patented Technology: Junction barrier structure has a lower VF than any equivalent die size (due to larger Schottky area and buried P-Wells).
High Reliability: Selected products available in proven hermetic packages, assembled in a MIL qualified facility for harsh and extreme environment applications.

SiC Schottky Diode Applications

PFC
Output Rectification
Solar Inverter
Motor Control
Snubber Diode

Looking for SiC Modules? Please go to the SiC Module landing page, with links to SiC Diode Modules and SiC MOSFET Modules.

Selection Table

Volts (V)	I_F(avg)(A)	V_F(V)	P/N	Package	Hermetic	Notes
1200	10	1.5	MSC010SDA120K	TO-220	No
	10	1.5	MSC010SDA120B	TO-247 2-Lead		Coming soon!
	15	1.5	MSC015SDA120B	TO-247 2-Lead		Coming soon!
	20	1.5	MSC020SDA120B	TO-247 2-Lead
	30	1.5	MSC030SDA120B	TO-247 2-Lead		Coming soon!
	50	1.5	MSC050SDA120B	TO-247 2-Lead		Coming soon!
700	10	1.5	MSC010SDA070K	TO-220		Coming soon!
	30	1.5	MSC030SDA070K	TO-220		Coming soon!
	50	1.5	MSC050SDA070B	TO-247 2-Lead		Coming soon!
Volts (V)	I_F(avg)(A)	V_F(V)	P/N	Package	Hermetic	Notes
650	10	1.5	APT10SCD65K	TO-220	No	Not recommended for new designs
	20	1.5	APT20SCD65K	TO-220		Not recommended for new designs
	30	1.5	APT30SCD65B	TO-247		Not recommended for new designs
	2 x 10	1.5	APT10SCD65KCT	TO-220		Not recommended for new designs
1200	10	1.5	APT10SCD120B	TO-247		Not recommended for new designs
	10	1.5	APT10SCD120K	TO-220		Not recommended for new designs
	20	1.5	APT20SCD120B	TO-247		Not recommended for new designs
	20	1.5	APT20SCD120S	D³		Not recommended for new designs
	30	1.5	APT30SCD120B	TO-247		Not recommended for new designs
	30	1.5	APT30SCD120S	D³		Not recommended for new designs
	2 x 10	1.5	APT10SCD120BCT	TO-247		Not recommended for new designs
1700	10	1.5	APT10SCE170B	TO-247		Not recommended for new designs
Volts (V)	I_F(avg)(A)	V_F(V)	P/N	Package	Hermetic	Notes
600	10	1.0	MSICSN10060	TO-257	Yes
	10	1.0	MSICSS10060	U-4
	2 x 10	1.0	MSICSN10060D	TO-257
		1.0	MSICSN10060CA	TO-257		Common Anode
		1.0	MSICSN10060CC	TO-257		Common Cathode
		1.0	MSICSS10060CC	U-3		Common Cathode
1200	5	1.2	MSICSN05120	TO-257
		1.2	MSICSS05120	U-4
		1.2	MSICSX05120	TO-257		Tabless package
	2 x 5	1.2	MSICSN05120D	TO-257
		1.2	MSICSN05120CA	TO-257		Common Anode
		1.2	MSICSN05120CC	TO-257		Common Cathode
		1.2	MSICSS05120CC	U-3		Common Cathode
	10	1.0	MSICSN10120	TO-257
	10	1.0	MSICSS10120	U-4
	2 x 10	1.0	MSICSN10120D	TO-257
		1.0	MSICSN10120CA	TO-257		Common Anode
		1.0	MSICSN10120CC	TO-257		Common Cathode
		1.0	MSICSS10120CC	U-3		Common Cathode