SiC Schottky Diodes
Overview
Silicone Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes.SiC Schottky Diode Features
- Essentially zero forward and reverse recovery = reduced switch and diode switching losses
- Temperature independent switching behavior = stable high temperature performance
- Positive temperature coefficient of VF = ease of parallel operation
- Usable 175°C Junction Temperature = safely operate at higher temperatures
SiC Schottky Diode Benefits
- Improved System Efficiency
- Higher Reliability
- Lower System Switching Losses
- Lower System Cost
- Smaller EMI Filter
- Smaller Magnetic Components
- Smaller Heat-Sink
- Smaller Switches, Eliminate Snubbers
- Reduced System Size
- Fewer/Smaller Components
Microsemi SiC Schottky Diode Advantages
- Superior Passivation Technology: leads to higher reliability. Microsemi thin film passivation applied in the wafer fab vs. competitors’ spin on passivation applied post wafer fab.
- Patented Technology: Junction barrier structure has a lower VF than any equivalent die size (due to larger Schottky area and buried P-Wells).
- High Reliability: Selected products available in proven hermetic packages, assembled in a MIL qualified facility for harsh and extreme environment applications.
Selection Table
| Volts (V) | IF(avg)(A) | VF(V) | P/N | Package | Hermetic | Notes |
| 650 | 10 | 1.5 | APT10SCD65K | TO-220 | No | |
| 20 | 1.5 | APT20SCD65K | TO-220 | |||
| 30 | 1.5 | APT30SCD65B | TO-247 | |||
| 2 x 10 | 1.5 | APT10SCD65KCT | TO-220 | |||
| 1200 | 10 | 1.5 | APT10SCD120B | TO-247 | ||
| 1.5 | APT10SCD120K | TO-220 | ||||
| 20 | 1.5 | APT20SCD120B | TO-247 | |||
| 1.5 | APT20SCD120S | D3 | ||||
| 30 | 1.5 | APT30SCD120B | TO-247 | |||
| 1.5 | APT30SCD120S | D3 | ||||
| 2 x 10 | 1.5 | APT10SCD120BCT | TO-247 | |||
| 1700 | 10 | 1.5 | APT10SCE170B | TO-247 | ||
| Volts (V) | IF(avg)(A) | VF(V) | P/N | Package | Hermetic | Notes |
| 600 | 10 | 1.0 | MSICSN10060 | TO-257 | Yes | |
| 1.0 | MSICSS10060 | U-4 | ||||
| 2 x 10 | 1.0 | MSICSN10060D | TO-257 | |||
| 1.0 | MSICSN10060CA | TO-257 | Common Anode | |||
| 1.0 | MSICSN10060CC | TO-257 | Common Cathode | |||
| 1.0 | MSICSS10060CC | U-3 | Common Cathode | |||
| 1200 | 5 | 1.2 | MSICSN05120 | TO-257 | ||
| 1.2 | MSICSS05120 | U-4 | ||||
| 1.2 | MSICSX05120 | TO-257 | Tabless package | |||
| 2 x 5 | 1.2 | MSICSN05120D | TO-257 | |||
| 1.2 | MSICSN05120CA | TO-257 | Common Anode | |||
| 1.2 | MSICSN05120CC | TO-257 | Common Cathode | |||
| 1.2 | MSICSS05120CC | U-3 | Common Cathode | |||
| 10 | 1.0 | MSICSN10120 | TO-257 | |||
| 1.0 | MSICSS10120 | U-4 | ||||
| 2 x 10 | 1.0 | MSICSN10120D | TO-257 | |||
| 1.0 | MSICSN10120CA | TO-257 | Common Anode | |||
| 1.0 | MSICSN10120CC | TO-257 | Common Cathode | |||
| 1.0 | MSICSS10120CC | U-3 | Common Cathode |
Applications
SiC Schottky Diode Applications
- PFC
- Output Rectification
- Solar Inverter
- Motor Control
- Snubber Diode
SiC Products Brochure
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