SiC Schottky Barrier Diodes
Overview
Silicone Carbide (SiC) Schottky Barrier Diodes (SBD) offer superior dynamic and thermal performance over conventional Silicon power diodes.SiC Diode Features
- Ultra-fast recovery times
- Soft recovery characteristics
- Low forward voltage
- Low leakage current
- Avalanche energy rated
- Essentially zero forward and reverse recovery = reduced switch and diode switching losses
- AEC-Q101 qualified with usable 175 degrees Celsius junction temperature
SiC Diode Benefits
- Improved system efficiency at higher switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems with increased power density
- Lower System Cost (smaller magnetic/heat sinks, fewer components, reduced system size)
- Commercial and Automotive qualified solutions
SiC Diode Applications
- Power Factor correction (PFC)
- Anti-parallel diode
- Switch mode power supply
- Inverters/converters
- Motor Control
- Freewheeling diode
- Switch mode power supply
- Inverters/converters
- Snubber/clamp diode
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