SiC Rectifiers
Overview
Silicone Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes.SiC Schottky Diode Features
- Essentially zero forward and reverse recovery = reduced switch and diode switching losses
- Temperature independent switching behavior = stable high temperature performance
- Positive temperature coefficient of VF = ease of parallel operation
- Usable 175°C Junction Temperature = safely operate at higher temperatures
SiC Schottky Diode Benefits
- Improved System Efficiency
- Higher Reliability
- Lower System Switching Losses
- Lower System Cost
- Smaller EMI Filter
- Smaller Magnetic Components
- Smaller Heat-Sink
- Smaller Switches, Eliminate Snubbers
- Reduced System Size
- Fewer/Smaller Components
Microsemi SiC Schottky Diode Advantages
- Superior Passivation Technology: leads to higher reliability. Microsemi thin film passivation applied in the wafer fab vs. competitors’ spin on passivation applied post wafer fab.
- Patented Technology: Junction barrier structure has a lower VF than any equivalent die size (due to larger Schottky area and buried P-Wells).
- High Reliability: Selected products available in proven hermetic packages, assembled in a MIL qualified facility for harsh and extreme environment applications.
SiC Schottky Diode Applications
- PFC
- Output Rectification
- Solar Inverter
- Motor Control
- Snubber Diode
Selection Table
| Volts (V) | IF(avg)(A) | VF(V) | P/N | Package | Hermetic | Notes |
| 1200 | 10 | 1.5 | MSC010SDA120K | TO-220 | No | |
| 10 | 1.5 | MSC010SDA120B | TO-247 2-Lead | |||
| 15 | 1.5 | MSC015SDA120B | TO-247 2-Lead | Coming soon! | ||
| 20 | 1.5 | MSC020SDA120B | TO-247 2-Lead | |||
| 30 | 1.5 | MSC030SDA120B | TO-247 2-Lead | |||
| 50 | 1.5 | MSC050SDA120B | TO-247 2-Lead | |||
| 700 | 10 | 1.5 | MSC010SDA070K | TO-220 | ||
| 30 | 1.5 | MSC030SDA070K | TO-220 | Coming soon! | ||
| 50 | 1.5 | MSC050SDA070B | TO-247 2-Lead | Coming soon! |
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