SiC MOSFET Modules
Overview
Silicone Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon power diodes.Microsemi SiC MOSFETs Advantages
- Best in Class RDSON vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range.
- Longest Short Circuit Withstand Rating: highest simple easy control circuit design
Microsemi NEW SP6LI (Low Inductance)
- Extremely Low Stray Inductance < 2.9 nanohenry
- Dedicated to SiC MOSFET Technology
- Enabling High Current
- High Switching Frequency
- High Efficiency
Microsemi SiC Power Modules Advantages
- Design expertise
- High power density
- Low profile packages
- Extended temperature capabilities
- Pin locating flexibility
- Mix of Silicon
Resources
SiC Power Module Application Notes
- 35 kW Active Rectifier with Integrated PM
- 48kW Resonant Converter For X-Ray Machines Uses High Speed Power Modules with Integral Liquid Cooling
- Advanced IGBT Driver Application Manual
- Handling Instructions & Protection Against Electrostatic Discharges
- High Frequency Resonant Half Bridge
- Module Flatness
- Mounting Instructions for D3 and D4 Power Modules
- Mounting Instructions for Phase Leg and Full Bridge SP2 Power Modules
- Mounting Instructions for SP1 Power Modules
- Mounting Instructions for SP3 Power Modules
- Mounting Instructions for SP3F Power Modules
- Mounting Instructions for SP4 Power Modules
- Mounting Instructions for SP6 Power Modules
- Mounting Instructions for SP6 Low Inductance Power Module
- Mounting Instructions for SP6-P (12mm) Power Modules
- Turn Off Snubber Design for High Frequency Modules
- Using NTC Temperature Sensors Integrated into Power Modules
SiC Documentation
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