RF VDMOS Power Devices
Overview
The ARF family of RF Power MOSFETs is optimized for applications requiring frequencies as high as 150MHz and operating voltages as high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microsemi's high voltage MOSFET technology with RF specific die geometries.Why Higher Voltage? Higher VDD means higher load impedance. For 150W output from a 50V supply, the load impedance is only 8 ohms. At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still operate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given power output increasing efficiency and reducing the size, weight, and cost of other system components.
The DRF1200/01/02/03 Hybrids integrate Driver, bypass capacitors, and RF MOSFETs into a single package. Integration maximizes amplifier performance by minimizing transmission line parasitics between the Driver and MOSFET. The DRF1300 or DRF1301 has two independent channels, each containing a Driver and RF MOSFET in a push-pull configuration. The DRF1400A and B are half bridge hybrids with symmetrically orientated leads so that the two can easily be configured into a full bridge converter. All DRF parts feature a proprietary Anti-ring function to eliminate cross conduction in a Bridge or push-pull topologies. All DRF parts can be externally selected in either an inverting or non-inverting configuration.
The VRF family of RF MOSFETs are improved replacements for industry standard RF transistors. They provide improved ruggedness by increasing the BVDSS over 30% from the industry standard of 125 volts to 170V minimum.
Applications
Industrial RF ISM Transistor Applications
- Semi-Cap (6, 13, 27, 40MHz)
- Industrial Glass (6, 13, 27, 40MHz)
- PV Cells (6, 13, 27, 40MHz)
- Flat Panel Displays (6, 13, 27, 40MHz)
- Mass Spectrometry (13, 27MHz)
- Dielectric Heating (2 to 40MHz)
Laser RF ISM Transistor Applications
- Machine Tools (6, 13, 27MHz)
- Drilling (6, 13, 27MHz)
- Marking (13, 27, 40, 81, 108MHz)
- Cutting (6, 13, 27MHz)
Medical RF ISM Transistor Applications
- MRI (8 to 36, 64, 128 300MHz)
- Laser Scalpel (13, 27, 40, 81, 108MHz)
- Diathermy/Hyperthermia (8MHz)
- Chemical Analysis (13, 27MHz)
High-Frequency Communications
- Marine Radio (2 to 40MHz)
- HF Radio (2 to 40MHz)
- FM Broadcast (87 to 108MHz)
Resources
Selection Guides
Application Notes
- Determining Maximum RF Output Power Rating (36.55 kB)
- High Voltage, High-Efficiency MOSFET RF Amplifiers - Design procedure examples (108.41 kB)
- 500W, Class E 27.12 MHz Amplifier Using A Single Plastic MOSFET (63.73 kB)
- A 300W MOSFET Linear Amplifier for 50 MHz (114.44 kB)
- A Push-Pull 300-Watt Amplifier for 81.36 MHz (251.36 kB)
- A 50 MHz, 250W Amplifier Using Push-Pull ARF448A/B (363.64 kB)
- Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz (72.74 kB)
- A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier (110.35 kB)
- Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs (230.38 kB)
- Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF (41.46 kB)
- Micronote 1814 - Paralleling MOSFETs in RF Amplifiers (205.03 kB)
- Micronote 1815 - DRF Series Design Guide (2.56 MB)
- Micronote 1816 - Device Selection and Optimizing of Half-Bridge RF Generators (159.39 kB)
- Micronote 1820 - VSWR Testing of RF Power MOSFETs (374.68 kB)
- Micronote 1821 - High-Performance, Cost-Effective VDMOS RF Power Device Solutions for HF/VHF Applications (315.01 kB)
- Micronote 1823 - Comparative Analysis of 150W RF VDMOS Transistors for 100MHZ Applications (2.58 MB)
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