Silicon & GaAs GUNN Diodes, Sensors and Sources

• Overview
• Resources

Overview

Microsemi's GaAs GUNN Diodes are fabricated from epitaxial layers grown at Microsemi by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra-low phase noise and 1/f noise. 

P/N	Pout min (mW)	Band	Freq Range (Ghz)	Vop (V)	Iop (mA)	Type	Heatsink/Ground
MG1036-M16	10	V	60.5-85	4.5	900	CW EPI-Down	Cathode
MG1024-M16	10	W	85-95	4.5	1100	CW EPI-Down	Cathode
MG1025-M16	20	W	85-95	4.5	1000	CW EPI-Down	Cathode
MG1001-M11	50	C	5.4-6.9	12	400	CW EPI-Down	Cathode
MG1005-M11	50	X	8-12.4	10	400	CW EPI-Down	Cathode
MG1009-M11	50	Ku	12.4-18	8	500	CW EPI-Down	Cathode
MG1013-M16/83B	50	K	18-26.5	6	600	CW EPI-Down	Cathode
MG1017-M16	50	Ka	26.5-40	4.5	700	CW EPI-Down	Cathode
MG1021-M16	50	U	40-60	4	800	CW EPI-Down	Cathode
MG1037-M16	50	V	60.5-85	5	1100	CW EPI-Down	Cathode
MG1038-M16	50	W	85-95	5	1200	CW EPI-Down	Cathode
MG1002-M11	100	C	5.4-6.9	12	600	CW EPI-Down	Cathode
MG1006-M11	100	X	8-12.4	10	700	CW EPI-Down	Cathode
MG1010-M11	100	Ku	12.4-18	8	800	CW EPI-Down	Cathode
MG1014-M16/83B	100	K	18-26.5	6	1000	CW EPI-Down	Cathode
MG1018-M16	100	Ka	26.5-40	4.5	1100	CW EPI-Down	Cathode
MG1022-M16	100	U	40-60	4	1200	CW EPI-Down	Cathode
MG1023-M16	150	U	40-50	4	1600	CW EPI-Down	Cathode
MG1015-M16/83B	200	K	18-26.5	6	1400	CW EPI-Down	Cathode
MG1019-M16	200	Ka	26.5-40	5	1400	CW EPI-Down	Cathode
MG1003-42	250	C	5.4-6.9	12	1100	CW EPI-Down	Cathode
MG1007-42	250	X	8-12.4	10	1200	CW EPI-Down	Cathode
MG1011-42	250	Ku	12.4-18	8	1200	CW EPI-Down	Cathode
MG1020-M16	250	Ka	26.5-40	5.5	1600	CW EPI-Down	Cathode
MG1039-M16	300	Ka	26.5-35	5.5	1700	CW EPI-Down	Cathode
MG1040-M16	350	Ka	26.5-35	5.5	1800	CW EPI-Down	Cathode
MG1016-83B	400	K	18-23	6	1700	CW EPI-Down	Cathode
MG1004-42	500	C	5.4-6.9	12	1300	CW EPI-Down	Cathode
MG1008-42	500	X	8-12.4	10	1600	CW EPI-Down	Cathode
MG1012-42	500	Ku	12.4-18	8	1700	CW EPI-Down	Cathode
MG1034-42	5000	X	9.3	35	8000	Pulsed EPI-Down	Cathode
MG1060-42	10000	X	9.3	70	6000	Pulsed EPI-Down	Cathode
MG1054-30	5	K	18-26.5	5	200	CW EPI-Up	Anode
MG1052-30	10	X	8-12.4	8	140	CW EPI-Up	Anode
MG1058-30	10	K	18-26.5	5	300	CW EPI-Up	Anode
MG1056-30	20	X	8-12.4	8	200	CW EPI-Up	Anode
MG1044-130	5	K	18-26.5	8	120	Pulsed EPI-Up	Anode
MG1041-11	10	X	8-12.4	9	110	Pulsed EPI-Up	Anode
MG1045-30	10	K	18-26.5	8	150	Pulsed EPI-Up	Anode
MG1042-30	20	X	8-12.4	9	140	Pulsed EPI-Up	Anode
MG1046-30	20	K	18-26.5	8	200	Pulsed EPI-Up	Anode
MG1043-30	30	X	8-12.4	10	180	Pulsed EPI-Up	Anode

Resources

•  Sensors & Semiconductor Diodes Selection Guide
• RF & Microwave Diode and Transistor Product Catalog
• MicroSolutions - Microwave Diode Packages

• Gunn Diodes (Anode Heatsink)
• CW Epi-Up Gunn Diodes
• Pulsed Epi-Up Gunn Diodes
• Gunn Diodes (Cathode Heatsink)
• C-W Band Gunn Diodes
• High Power Pulsed Gunn Diodes
• Stacked Pulsed Gunn Diodes