Silicon & GaAs GUNN Diodes, Sensors and Sources
Overview
Microsemi's GaAs GUNN Diodes are fabricated from epitaxial layers grown at Microsemi by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra-low phase noise and 1/f noise.| P/N | Pout min (mW) | Band | Freq Range (Ghz) | Vop (V) | Iop (mA) | Type | Heatsink/Ground |
| MG1036-M16 | 10 | V | 60.5-85 | 4.5 | 900 | CW EPI-Down | Cathode |
| MG1024-M16 | 10 | W | 85-95 | 4.5 | 1100 | CW EPI-Down | Cathode |
| MG1025-M16 | 20 | W | 85-95 | 4.5 | 1000 | CW EPI-Down | Cathode |
| MG1001-M11 | 50 | C | 5.4-6.9 | 12 | 400 | CW EPI-Down | Cathode |
| MG1005-M11 | 50 | X | 8-12.4 | 10 | 400 | CW EPI-Down | Cathode |
| MG1009-M11 | 50 | Ku | 12.4-18 | 8 | 500 | CW EPI-Down | Cathode |
| MG1013-M16/83B | 50 | K | 18-26.5 | 6 | 600 | CW EPI-Down | Cathode |
| MG1017-M16 | 50 | Ka | 26.5-40 | 4.5 | 700 | CW EPI-Down | Cathode |
| MG1021-M16 | 50 | U | 40-60 | 4 | 800 | CW EPI-Down | Cathode |
| MG1037-M16 | 50 | V | 60.5-85 | 5 | 1100 | CW EPI-Down | Cathode |
| MG1038-M16 | 50 | W | 85-95 | 5 | 1200 | CW EPI-Down | Cathode |
| MG1002-M11 | 100 | C | 5.4-6.9 | 12 | 600 | CW EPI-Down | Cathode |
| MG1006-M11 | 100 | X | 8-12.4 | 10 | 700 | CW EPI-Down | Cathode |
| MG1010-M11 | 100 | Ku | 12.4-18 | 8 | 800 | CW EPI-Down | Cathode |
| MG1014-M16/83B | 100 | K | 18-26.5 | 6 | 1000 | CW EPI-Down | Cathode |
| MG1018-M16 | 100 | Ka | 26.5-40 | 4.5 | 1100 | CW EPI-Down | Cathode |
| MG1022-M16 | 100 | U | 40-60 | 4 | 1200 | CW EPI-Down | Cathode |
| MG1023-M16 | 150 | U | 40-50 | 4 | 1600 | CW EPI-Down | Cathode |
| MG1015-M16/83B | 200 | K | 18-26.5 | 6 | 1400 | CW EPI-Down | Cathode |
| MG1019-M16 | 200 | Ka | 26.5-40 | 5 | 1400 | CW EPI-Down | Cathode |
| MG1003-42 | 250 | C | 5.4-6.9 | 12 | 1100 | CW EPI-Down | Cathode |
| MG1007-42 | 250 | X | 8-12.4 | 10 | 1200 | CW EPI-Down | Cathode |
| MG1011-42 | 250 | Ku | 12.4-18 | 8 | 1200 | CW EPI-Down | Cathode |
| MG1020-M16 | 250 | Ka | 26.5-40 | 5.5 | 1600 | CW EPI-Down | Cathode |
| MG1039-M16 | 300 | Ka | 26.5-35 | 5.5 | 1700 | CW EPI-Down | Cathode |
| MG1040-M16 | 350 | Ka | 26.5-35 | 5.5 | 1800 | CW EPI-Down | Cathode |
| MG1016-83B | 400 | K | 18-23 | 6 | 1700 | CW EPI-Down | Cathode |
| MG1004-42 | 500 | C | 5.4-6.9 | 12 | 1300 | CW EPI-Down | Cathode |
| MG1008-42 | 500 | X | 8-12.4 | 10 | 1600 | CW EPI-Down | Cathode |
| MG1012-42 | 500 | Ku | 12.4-18 | 8 | 1700 | CW EPI-Down | Cathode |
| MG1034-42 | 5000 | X | 9.3 | 35 | 8000 | Pulsed EPI-Down | Cathode |
| MG1060-42 | 10000 | X | 9.3 | 70 | 6000 | Pulsed EPI-Down | Cathode |
| MG1054-30 | 5 | K | 18-26.5 | 5 | 200 | CW EPI-Up | Anode |
| MG1052-30 | 10 | X | 8-12.4 | 8 | 140 | CW EPI-Up | Anode |
| MG1058-30 | 10 | K | 18-26.5 | 5 | 300 | CW EPI-Up | Anode |
| MG1056-30 | 20 | X | 8-12.4 | 8 | 200 | CW EPI-Up | Anode |
| MG1044-130 | 5 | K | 18-26.5 | 8 | 120 | Pulsed EPI-Up | Anode |
| MG1041-11 | 10 | X | 8-12.4 | 9 | 110 | Pulsed EPI-Up | Anode |
| MG1045-30 | 10 | K | 18-26.5 | 8 | 150 | Pulsed EPI-Up | Anode |
| MG1042-30 | 20 | X | 8-12.4 | 9 | 140 | Pulsed EPI-Up | Anode |
| MG1046-30 | 20 | K | 18-26.5 | 8 | 200 | Pulsed EPI-Up | Anode |
| MG1043-30 | 30 | X | 8-12.4 | 10 | 180 | Pulsed EPI-Up | Anode |
Sensors & Semiconductor Diodes Selection Guide
