Radiation & Reliability Data

Overview

Single Event Upset (SEU) and Single Event Latch-Up (SEL) Performance

Ionizing radiation can cause unwanted effects in semiconductor devices. Energetic protons, neutrons, heavy ions, and alpha particles can strike sensitive regions of the transistor, causing various failures, or Single Event Effects (SEE), such as:

Single Event Upsets (SEUs), which occur when high-energy ionizing particles, such as heavy ions, alpha particles or protons, irradiate a circuit or pass through an integrated circuit causing a disruption in the system logic.

Single Event Latch-Up (SEL), which is a condition that causes loss of device functionality due to a single-event-induced high current state. A SEL may or may not cause permanent device damage, but requires power strobing of the device to resume normal device operations. Devices with low (< 37.5 MeV-cm2/mg) SEL LETth are considered unsuitable for space applications.

• RTG4 SEE Reports
• RTAX-S/SL/DSP SEE Reports
• RT ProASIC3 SEE Reports
• RTSX-S/SU SEE Reports
• RT Legacy SEE Reports

Total Ionizing Dose (TID)

Total Ionizing Dose (TID) is caused by radiation due to charged particles and gamma rays in Space. This radiation deposits energy by causing ionization in the material. The ionization can change the charge excitation, charge transport, bonding, and decomposition properties of the material, and therefore, the device parameters. Total dose is the cumulative ionizing radiation that an electronic device receives over a specified period of time. The damage is dependant on the amount of radiation and how long it took to accumulate the total dose and is expressed in RAD (Radiation Absorbed Dose). Microsemi performs wafer lot specific TID testing per TM1019 of Mil-Std 883 class B. Test reports are posted here for customers' information. The results obtained do not constitute a guarantee that all units from each wafer lot will meet the TID levels observed in sample testing.

• RTG4 TID Reports
• RTAX-S/SL/DSP TID Reports
• RT ProASIC3 TID Reports
• RTSX-S/SU TID Reports
• RT Legacy TID Reports

Neutron-Induced Firm Errors

General Information

Microsemi Corporation COTS and Up-Screening Policy		66 KB	1/2003
Post-Programming Burn-In on Microsemi FPGAs		471 KB	1/2003
RadHard FAQ		103 KB	3/1997

Quality & Reliability Reports

High Reliability White Papers

FPGA Reliability and the Sunspot Cycle White Paper			9/2011
RTAX-S Testing and Reliability Update		82 KB	9/2007
Enhanced Qualification and Lot Acceptance Procedures		35 KB	8/2005