RTAX-S/SL

RTAX-S radiation-tolerant FPGAs offer industry-leading advantages for designers of space-flight systems. High performance and low-power consumption, true single-chip form factor, and live-at-power-up operation all combine to make RTAX-S the FPGA of choice for space designers. From concept to final integration and flight, Microsemi provides the tools and support to help you successfully integrate your space-flight application into RTAX-S radiation-tolerant FPGAs. Additionally, for space applications that have a need for a lower standby current, Microsemi offers RTAX-SL, the low-power grade option that has half the standby current of the standard product at worst-case conditions.

RTAX-S/SL offers high performance at densities of up to 4 million equivalent system gates and 840 user I/Os for space-based applications. The RTAX-S/SL family, the leading Microsemi product offering for space applications, features SEU-hardened flip-flops implemented without any user intervention, and offers the benefits of user-implemented triple module redundancy (TMR) without the associated overhead.

Key Features

• Highly reliable, nonvolatile antifuse technology
• 30 k to 500 k ASIC gates (250 k to 4 M system gates)
• Up to 540 kbits of embedded memory with optional EDAC protection
• Up to 840 user-programmable I/Os
• Total Dose: 300 kRads (functional) and 200 kRads (parametric)
• SEU less than 1E^-10 errors per bit-day (worst-case GEO)
• SEL immune to LET_TH in excess of 117 MeV-cm²/mg
• SEU immune to LET_TH > 37 MeV-cm²/mg
• Advanced packaging for space applications (CQFP and CCGA/LGA)
• Qualified to QML class Q and QML class V
• Screening: E-Flow (Microsemi Extended Flow), B-Flow (Mil-STD-883B), and V-Flow (MIL-PRF-38535)
• RTAX-SL: Low-power grade option with half the standby current of standard product at worst case conditions

The RTAX-S/SL FPGAs family possesses an unprecedented 33 million device-hours of reliability data from a flight and commercial equivalent units. There have been no antifuse faults to date. A failure in time (FIT) has been calculated to be less than 10 based on the chi-square distribution, with a minimum upper confidence limit of 60% per JESD74 and an activation energy of Ea = 0.7 eV.

RTAX-S/SL FPGAs are now QML Class V qualified, allowing customers to source the highest quality and reliability FPGAs by simply referencing the DLA Standard Military Drawing (SMD) part numbers. QML Class V parts include 2000 hours life test on each wafer lot and Destructive Physical Analysis (DPA) on each assembly lot. This provides scheduling and cost benefit as customers do not need to perform these tests on their own.

Radiation Performance

• Single-Event Effects
  • Testing performed at BNL and Texas A & M 2004
• SEL and SEDR
  • Testing performed up to LET_TH 117 MeV/cm²-mg (125 ° C)
  • No SEL or SEDR observed
  • No clock or control logic upset observed
• Single-Event Transient
  • High-frequency testing (with NASA Goddard Space Flight Center) up to 150 MHz-no anomalies found
• Logic Single-Event Upset (SEU)
  • Cross-section < 1E^-9 cm²
  • LET_TH > 37 MeV-cm²/mg
  • SEU per R-Cell < 4E^-11 Errors/bit-day (worst case GEO)
  • Better than the targeted 1E^-10 upsets/bit-day
• Memory SEU
  • Cross-section / word ~ 4E^-9 cm², LET_TH > 30 MeV-cm²/mg
    • EDAC operational, background scrubbing at 2 MHz
  • SEU < 1E^-10 upsets/bit-day (worst case GEO)
• Total Ionizing Dose
  • Initial results indicate suitability for vast majority of space missions
    • No parametric failure up to 200 kRads (Si)
    • No functional failure up to 300 kRads (Si)

Total Ionizing Dose (TID)

Total Ionizing Dose (TID) is caused by radiation due to charged particles and gammas in space. This radiation deposits energy by causing ionization in the material. The ionization can change the charge excitation, charge transport, bonding, and decomposition properties of the material, and therefore, the device parameters. The total dose is a cumulative ionizing radiation that an electronic device receives over a specified period of time. The damage is dependent on the amount of radiation and how long it took to accumulate the total dose and is expressed in Radiation Absorbed Dose (RAD). Microsemi publishes Radiation & Reliability Data so that customers can use the radiation data when designing applications with high-reliability needs.

Single-Event Effects (SEE)

Ionizing radiation can cause unwanted effects in semiconductor devices. Energetic protons, neutrons, heavy ions, and alpha particles can strike sensitive regions of the transistor, causing various failures, or SEE, such as the following:

• Single-Event Upsets (SEUs), which occur when high-energy ionizing particles, such as heavy ions, alpha particles or protons, irradiate a circuit or pass through an integrated circuit, causing a disruption in the system logic.
• Single-Event Latch-Up (SEL) is a condition that causes a device to lose functionality due to a single-event-induced high current state. An SEL may or may not cause permanent device damage, but it does require power strobing of the device to resume normal device operations. Devices with low (< 37.5 MeV-cm²/mg) SEL LET_TH are considered unsuitable for space applications.
• Single-Event Transient (SET) upsets are caused by charges accumulated in reverse-biased junctions in CMOS digital circuits at higher frequencies

Microsemi publishes SEE test reports so that customers can take the data into consideration while designing space systems.