2N3506U4 (#349181) |
Product Status
In Production |
Overview
| This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The U4 package is hermetically sealed and provides a low profile for minimizing board height. The 'A' version maintains it's forward current transfer ratio, hFE, at low temperature at higher collector-emitter voltage. These devices also available in TO-5 and TO-39 packages. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. |
| Package Carrier: | Tray |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Breakdown Voltage, Collector-Base (Emitter O | VBR(CBO) | 60 | V | ||
| Collector to Emitter Saturation Voltage | VCE(sat) | 1.5 | V | ||
| Collector-Emitter Voltage (Base Open) | VCEO | 40 | V | ||
| DC Current Gain | HFE | 50 | 250 | ||
| Forward Current Transfer Ratio (Magnitude of | |hfe| | 3 | 15 | ||
| Input Capacitance | Cin | 300 | pF | ||
| Output Capacitance | Co | 40 | pF |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector Current (dc) | IC | 3 | A | ||
| Collector to Base Voltage (Emitter Open) | VCBO | 60 | V | ||
| Emitter-Base Voltage (Collector Open) | VEBO | 5 | V | ||
| Junction Temperature (°C) | TJ | -65 | 200 | °C | |
| Power Dissipation | PD | 1 | W |
| Alphanumeric Parameter | Value |
|---|---|
| Quality Level | - |
Resources
| Datasheets | |
|---|---|
 LDS-0016-2 Datasheet |
This part can be found in the following product categories:
