2N3507L (#76599) |
Product Status
In Production |
Overview
This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. |
Package Carrier: | ESD Bag |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Breakdown Voltage, Collector-Base (Emitter O | VBR(CBO) | 80 | V | ||
Collector to Emitter Saturation Voltage | VCE(sat) | 0.5 | V | ||
DC Current Gain | HFE | 35 | 175 | ||
Forward Current Transfer Ratio (Magnitude of | |hfe| | 3 | 15 | ||
Input Capacitance | Cin | 300 | pF | ||
Output Capacitance | Co | 40 | pF |
Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector Current (dc) | IC | 3 | A | ||
Collector to Base Voltage (Emitter Open) | VCBO | 80 | V | ||
Collector-Emitter Voltage (Base Open) | VCEO | 50 | V | ||
Emitter-Base Voltage (Collector Open) | VEBO | 5 | V | ||
Junction Temperature (°C) | TJ | -65 | 200 | °C | |
Power Dissipation | PD | 1 | W | ||
Thermal Resistance, Junction to Ambient (°C/ | RθJA | 175 | °C/W | ||
Thermal Resistance, Junction to Case (°C/W) | RθJC | 18 | °C/W |
Alphanumeric Parameter | Value |
---|---|
Quality Level | - |
Resources
Datasheets | |
---|---|
LDS-0016-1 Datasheet |
This part can be found in the following product categories: