2N3749 (#53120) |
Product Status
In Production |
Overview
This NPN silicon transistor is rated at 5 amps and is military qualified up to the JANTXV level. This TO-111 isolated package features a 180 degree lead orientation. |
Package Carrier: | Tray |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Breakdown Voltage, Collector-Base (Emitter O | VBR(CBO) | 110 | V | ||
Collector to Emitter Saturation Voltage | VCE(sat) | 0.25 | V | ||
DC Current Gain | HFE | 40 | 120 | ||
Forward Current Transfer Ratio (Magnitude of | |hfe| | 3 | 12 | ||
Output Capacitance | Co | 150 | pF |
Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector Current (dc) | IC | 5 | A | ||
Collector to Base Voltage (Emitter Open) | VCBO | 110 | V | ||
Collector-Emitter Voltage (Base Open) | VCEO | 80 | V | ||
Emitter-Base Voltage (Collector Open) | VEBO | 8 | V | ||
Junction Temperature (°C) | TJ | -65 | 200 | °C | |
Junction Temperature (°C) | TJ | -65 | 200 | °C | |
Power Dissipation | PD | 2 | W | ||
Thermal Resistance, Junction to Case (°C/W) | RθJC | 3.33 | °C/W |
Resources
Datasheets | |
---|---|
LDS-0328 Datasheet |
This part can be found in the following product categories: