MSC030SDA330B |
Product Status
In Production |
Overview
| The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. The MSC030SDA330B device is a 3300 V, 30 A SiC SBD in a two-lead TO-247 package |
ROHS| Package Carrier: | Tube |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Capacitance (pF) | C | 107 | pF | ||
| Forward Voltage (V) | VF | 2.1 | 2.4 | V | |
| Thermal Resistance, Junction to Case (°C/W) | RθJC | 0.19 | 0.27 | °C/W |
| Environmental Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Junction Temperature (°C) | TJ | -55 | 150 | °C |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward Current (A) | IF | 30 | A | ||
| Reverse Breakdown Voltage | VBR | 3300 | V |
| Alphanumeric Parameter | Value |
|---|---|
| Rectifier Configuration | |
| Silicon Carbide (SiC) Device Type | Rectifiers |
Resources
| Datasheets | |
|---|---|
| MSC030SDA330B Datasheet |
| Quality Certificates | |
|---|---|
 ISO 9001:2015 Certificate - Bend, OR, USA |
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