MSC010SDA070S |
Product Status
In Production |
Overview
The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. The MSC010SDA070S is a 700 V, 10 A SiC SBD in a D3 package. |
Package Carrier: | Tube |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Capacitance (pF) | C | 54 | pF | ||
Forward Voltage (V) | VF | 1.5 | 1.8 | V | |
Thermal Resistance, Junction to Case (°C/W) | RθJC | 1.3 | 1.8 | °C/W |
Environmental Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Junction Temperature (°C) | TJ | -55 | 175 | °C |
Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Forward Current (A) | IF | 10 | A | ||
Reverse Breakdown Voltage | VBR | 700 | V |
Alphanumeric Parameter | Value |
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Silicon Carbide (SiC) Device Type | Rectifiers |
Rectifier Configuration |
Resources
Datasheets | |
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Quality Certificates | |
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Spice Models | |
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700 V SiC SBD SPICE Models |
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