MSC020SDA120S |
Product Status
In Production |
Overview
| The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. The MSC020SDA120S is a 1200 V, 20 A SiC SBD in a D3 package. |
ROHS| Package Carrier: | Tube |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Capacitance (pF) | C | 91 | pF | ||
| Forward Voltage (V) | VF | 1.5 | 1.8 | V | |
| Thermal Resistance, Junction to Case (°C/W) | RθJC | 0.65 | 0.95 | °C/W |
| Environmental Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Junction Temperature (°C) | TJ | -55 | 175 | °C |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward Current (A) | IF | 22 | A | ||
| Reverse Breakdown Voltage | VBR | 1200 | V |
Resources
| Datasheets | |
|---|---|
| MSC020SDA120S Datasheet |
| Quality Certificates | |
|---|---|
 ISO 9001:2015 Certificate - Bend, OR, USA |
| Spice Models | |
|---|---|
| 1200 V SiC SBD SPICE Models |
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