MSC050SDA120S |
Product Status
In Production |
Overview
| The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. The MSC50SDA120S is a 1200 V, 50 A SiC SBD in a D3 package. |
ROHS| Package Carrier: | Tube |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Capacitance (pF) | C | 246 | pF | ||
| Forward Voltage (V) | VF | 1.5 | 1.8 | V | |
| Thermal Resistance, Junction to Case (°C/W) | RθJC | 0.24 | 0.35 | °C/W |
| Environmental Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Junction Temperature (°C) | TJ | -55 | 175 | °C |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward Current (A) | IF | 49 | A | ||
| Reverse Breakdown Voltage | VBR | 1200 | V |
Resources
| Datasheets | |
|---|---|
| MSC050SDA120S Datasheet |
| Quality Certificates | |
|---|---|
 ISO 9001:2015 Certificate - Bend, OR, USA |
|
 MIL-STD-790 - Taguig City, Philippines |
|
| PHIL AS9100D |
| Spice Models | |
|---|---|
| 1200 V SiC SBD SPICE Models |
This part can be found in the following product categories:
