MSC025SMA120S |
Product Status
In Production |
Overview
| Silicon carbide (SiC) power MOSFET product line from Microsemi increases your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Silicon Carbide N-Channel Power MOSFET, 1200V, 100A, 25mΩ |
ROHS| Package Carrier: | Tube |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-State Resistance (milliohms) | RDS(on) | 25 | 31 | mΩ |
| Environmental Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Junction Temperature (°C) | TJ | -55 | 175 | °C |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Current (dc) | ID | 63 | A | ||
| Reverse Breakdown Voltage | V(BR) | 1200 | V |
Resources
| Datasheets | |
|---|---|
| MSC025SMA120S Datasheet |
| App Notes | |
|---|---|
 Micronote 1824: MSCSICMDD/REF1 Dual SiC MOSFET Driver Reference Design |
|
| Micronote 1826: Microsemi SiC MOSFETs Design Recommendations |
| Product Brochures | |
|---|---|
| SiC Products Brochure |
| Spice Models | |
|---|---|
| 1200 V SiC MOSFET SPICE Models |
This part can be found in the following product categories:
