MSC025SMA120S |
Product Status
In Production |
Overview
| Silicon carbide (SiC) power MOSFET product line from Microsemi increases your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Silicon Carbide N-Channel Power MOSFET, 1200V, 100A, 25mΩ |
ROHS| Package Carrier: | Tube |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| On-State Resistance (milliohms) | RDS(on) | 25 | 31 | mΩ |
| Environmental Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Junction Temperature (°C) | TJ | -55 | 175 | °C |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain Current (dc) | ID | 63 | A | ||
| Reverse Breakdown Voltage | V(BR) | 1200 | V |
Ordering
| Distributor | SKU | Stock | MOQ | Pkg | |
|---|---|---|---|---|---|
| Digi-Key | 691-MSC025SMA120S-ND | 1 | Tube | No Stock | |
| Richardson RFPD | MSC025SMA120S | 400 | 1 | .. | Buy Now |
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