MMA053AA |
Product Status
In Production |
Overview
| MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from a 11 V supply. Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications. The MMA053AA amplifier features compact die size and I/Os that are internally matched to 50 ?, facilitating easy integration into multi-chip modules (MCMs). |
ROHS| Package Carrier: | Waffle Pack |
| Electrical Test | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Bias Current (mA) | Bias Current | 420 | mA | ||
| Bias Voltage | Vbias | 10 | V | ||
| Gain | G | 17 | dB | ||
| Noise Figure (dB) | NF | 3 | dB | ||
| Operating Frequency (GHz) | FOP | 0.01 | 10 | GHz | |
| Output IP3 (dBm) | IP3out | 43 | dBm | ||
| P1dB (dB) | P1dB | 30 | dBm | ||
| P3dB | P3dB | 32 | dBm |
Resources
| Datasheets | |
|---|---|
 MMA053AA MMIC pHEMT Distributed Power Amplifier Datasheet |
| Drawings | |
|---|---|
| MMA053AA Die Outline Drawing |
| Literature | |
|---|---|
| MMIC Selection Guide |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Lowell, MA, USA |
| S-parameters | |
|---|---|
| MMA053AA 11v 410mA |
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