3135GN-400V |
Product Status
Sampling |
Overview
The 3135GN-400V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT S-band transistor capable of providing over 400 Watts output power under 200 ? S pulse width, 20% duty cycle pulsing format with over 13 dB gain across the 3100 to 3500 MHz band. This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Market Application – High Power S-Band Pulsed Primary Radar |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 65 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 3.1 | 4 | GHz | |
Gain | G | 12 | dB | ||
Output Power (W) | POUT | 470 | W | ||
Pulse Width (PW) | τ | 200 | µs |
Resources
Datasheets | |
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3135GN-400V Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules S-Band Pulsed Primary Radar Output Stage