2731GN-400V |
Product Status
Sampling |
Overview
For S-band pulsed radar applications, with typically over 10.5dB gain, the 2731GN-400V is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of delivering more than 400 Watts of pulsed RF output power under 100uS, 10% pulsing across the 2700 to 3100 MHz band. Proprietary state of the art GaN on SiC semiconductor technology, internal pre-matching, hermetic seal, all gold metallization, and eutectic attachment result in a device that delivers the highest reliability and excellent ruggedness while making the 2731GN-400V the best choice to gain superior performance in the most demanding system designs. |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 40 | % | ||
Drain Supply Voltage (dc) | VDD | 50 | V | ||
Duty Cycle % | Duty Cycle (%) | 10 | % | ||
Frequency (GHz) | F | 2.7 | 3 | GHz | |
Gain | G | 10.6 | dB | ||
Output Power (W) | POUT | 415 | W | ||
Pulse Width (PW) | τ | 200 | µs |
Resources
Datasheets | |
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2731GN-400V Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules S-Band Pulsed Primary Radar Output Stage