2731GN-120V |
Product Status
In Production |
Overview
The 2731GN-120V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 15.7 dB gain, 120 W of pulsed RF output power at 200 ?s pulse width, 10% duty factor across the 2700 MHz to 3100 MHz band. This hermetically sealed transistor is designed for S-Band radar applications. It utilizes gold metallization and eutectic attach to provide the highest reliability and superior ruggedness. The 2731GN-120V is designed for S-Band pulsed radar. The export classification is EAR-99. |
Resources
Datasheets | |
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2731GN-120V Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
Ordering
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules S-Band Pulsed Primary Radar Output Stage