1214GN-15LE |
Product Status
In Production |
Overview
Key Features
|
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain Efficiency (%) | nd | 68 | % | ||
Duty Cycle % | Duty Cycle (%) | 35 | % | ||
Frequency (GHz) | F | 1.2 | 1 | GHz | |
Gain | G | 17.8 | dB | ||
Output Power (W) | POUT | 19 | W | ||
Pulse Width (PW) | τ | 4500 | µs |
Resources
Datasheets | |
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1214GN-15LE,1214GN-LEL,1214GN-LEP Datasheet |
App Notes | |
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Determining Maximum RF Output Power Rating | |
High Voltage, High Efficiency MOSFET RF Amplifiers - Design procedure examples |
Literature | |
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GaN Transistor Selection Guide |
Other | |
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RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Russia 2013 | |
RF & Microwave Capability & Roadmap (GaAs and GaN and MMICs) - Europe 2013 |
Product Briefs | |
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1214GN Class AB GaN-on-SiC HEMT Transistors |
Quality Certificates | |
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ISO 9001:2008 Certificate - Santa Clara, CA, USA | |
RFWMD - AS9100D and ISO9001-2015 - Santa Clara, CA, USA |
This part can be found in the following product categories:
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules
- RF, Microwave & Millimeter Wave RF/Microwave Power Transistor Products RF/Microwave GaN on SiC Power Devices, Pallets and Modules General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band