MG1041-11 |
Product Status
In Production |
Overview
The MG1041-11 GaAs GUNN Diode, epi-up (anode heatsink) is fabricated from epitaxial layers grown at Microsemi by Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra-low phase an 1/f noise. The MG1041-11 is available in the M11 ceramic microwave package for operation from 9.5GHz to 11.5GHz.
Features
|
Package Carrier: | Gel Pack |
Electrical Rating | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Operating Current (mA) | IOP | 110 | mA | ||
Operating Frequency (GHz) | FOP | 9.5 | 11.5 | GHz | |
Operating Voltage | VOP | 9 | V | ||
Output Power (mW) | POUT | 10 | mW |
Resources
Datasheets | |
---|---|
MG1041-MG1059 GUNN Diodes Anode Heat Sink Datasheet |
Literature | |
---|---|
MicroSolutions - Microwave Diode Packages | |
RF & Microwave Diode and Transistor Product Catalog | |
Sensors & Semiconductor Diodes Selection Guide |
Quality Certificates | |
---|---|
ISO 9001:2008 Certificate - Lowell, MA, USA |
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