MMA041AA |
Product Status
In Production |
Overview
| MMA041AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between DC and 26 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 18 dB, 3.2 dB noise figure, and 22 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 36 dBm. The MMA041AA amplifier features RF I/Os that are internally matched to 50 ?, which allows for easy integration into multi-chip modules (MCMs). |
ROHS| Package Carrier: | Waffle Pack |
| Electrical Test | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Bias Current (mA) | Bias Current | 150 | mA | ||
| Bias Voltage | Vbias | 7 | V | ||
| Gain | G | 18.5 | dB | ||
| Noise Figure (dB) | NF | 2 | dB | ||
| Operating Frequency (GHz) | FOP | 0.01 | 26 | GHz | |
| Output IP3 (dBm) | IP3out | 36 | dBm | ||
| P1dB (dB) | P1dB | 22 | dBm | ||
| P3dB | P3dB | 24 | dBm |
Resources
| Datasheets | |
|---|---|
 MMA041AA Datasheet Rev 2 |
| Literature | |
|---|---|
| MMIC Selection Guide |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Lowell, MA, USA |
| S-parameters | |
|---|---|
| MMA041AA 8V 150mA |
This part can be found in the following product categories:
