GC4921-112 |
Product Status
In Production |
Overview
Semiconductor mesa bean lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra-fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high intrinsic ‘I’ layer that provides low loss, high isolation and ultra-high speed switching characteristics. This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The Standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. |
ROHS| Package Carrier: | ESD Bag |
Resources
| Datasheets | |
|---|---|
 GC4921-112/GC4922-112 Mesa Beam Lead Diodes Datasheet |
| Quality Certificates | |
|---|---|
| ISO 9001:2008 Certificate - Lowell, MA, USA |
Ordering
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|---|---|---|---|---|---|
| Microchip Technology Inc. | .. | .. | .. | .. | Buy Now |
This part can be found in the following product categories:
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RF/Microwave Silicon and GaAs Diodes
Silicon & GaAs PIN Diodes Beam Lead PIN Diodes for Broadband Mesa Beam Lead PIN -
RF, Microwave & Millimeter Wave RF/Microwave Silicon and GaAs Diodes Silicon & GaAs PIN Diodes
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RF, Microwave & Millimeter Wave RF/Microwave Silicon and GaAs Diodes Silicon & GaAs PIN Diodes Beam Lead PIN Diodes for Broadband
