1N4148-1E3 |
Product Status
In Production |
| Signal or Computer Diodes |
Overview
| This popular 1N4148-1e3 JEDEC registered switching/signal diode is RoHS compliant and features internal metallurgical bonded construction. It is also available in non RoHS compliant form for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-35 package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. |
ROHS| Package Carrier: | ESD Bag |
| Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward Voltage (V) | VF | 0.8 | V | ||
| Junction Capacitance (pF) | CJ | 4 | pF | ||
| Reverse Breakdown Voltage | VBR | 100 | V | ||
| Reverse Current (µA) | IR | 0.02 | µA | ||
| Reverse Recovery Time | trr | 5 | ns |
| Maximum Electrical Rating | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward Surge Peak Current (A) | IFSM | 2 | A | ||
| Junction Temperature (°C) | TJ | -65 | 175 | °C | |
| Junction Temperature (°C) | TJ | -65 | 175 | °C | |
| Output Current (A) | IOUT | 0.2 | A | ||
| Reverse Breakdown Voltage | VBR | 75 | V | ||
| Thermal Resistance, Junction to Ambient (°C/ | RθJA | 325 | °C/W | ||
| Thermal Resistance, Junction to Lead (°C/W) | RθJL | 250 | °C/W |
Resources
| Datasheets | |
|---|---|
 LDS-0281 Datasheet |
This part can be found in the following product categories:
