Details for First Demonstration of 4H-SiC RF Bipolar Junction Transistors on a Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz

Name:	First Demonstration of 4H-SiC RF Bipolar Junction Transistors on a Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz Semi-insulating Substrate with fT/fMAX of 7/5.2 GHz
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Last updated on:	11/30/-1 00:00