Silicon Carbide (SiC): Ideal Technology for Higher Switching Frequency, Efficiency, and More

Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650 V) applications. Target markets and applications include:

• Industrial—motor drives, welding, UPS, SMPS, induction heating
• Transportation/automotive—EV battery charger, onboard chargers, H/EV powertrain, DC–DC converter, energy recovery
• Smart energy—PV inverter, wind turbine
• Medical—MRI power supply, X-ray power supply
• Commercial aviation—actuation, air conditioning, power distribution
• Defense—motor drives, auxiliary power supplies, integrated vehicle systems

SiC MOSFET and SiC Schottky Barrier Diode product lines from Microsemi increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower cost cooling.

Full In-House and Foundry Capabilities

• Silvaco design and process simulator
• Mask-making and layout
• Solid works and FEA

• High-temperature ion implantation
• High-temperature annealing
• SiC MOSFET gate oxide
• ASML steppers
• RIE and plasma etching
• Sputtered and evaporated metal deposition

Analytical and Support
• Thermal imaging
• Photo Emission Microscope system (Phemos 1000)

Reliability Testing and Screening
• AEC-Q101
• Wafer-level HTRB/HTGB
• Sonoscan and X-ray

More information on Silicon Carbide (SiC).

Leave a Reply

You must be logged in to post a comment.