Breakthrough Technology Combines High Performance with Low Losses

Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, with a smaller form factor and higher operating temperature in products covering industrial, automotive, medical, mil-aerospace, and communication market segments. Microsemi is proud to be at the forefront of this game-changing technologywith a comprehensive portfolio of SiC solutions.

Go here for Discrete Product and Power Modules information.

Microsemi offers a complete engineering solution with mix and match capabilities in terms of package, interconnection, configuration, performance, and cost.

Out of the existing standard power modules product line, Microsemi can offer simple, modified, or fully customized parts to meet 100% of our customers’ needs: Design expertise, high power density, low profile packages, extended temperature capabilities, pin location flexibility, and mix of silicon.

In the coming days, we will share why Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650 V) applications.

Tags: SiC, SiC MOSFET, SiC Schottky Barrier Diode, Silicon Carbide, Switching Frequency