Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace, aviation, and communication market segments. Microsemi’s next-generation SiC MOSFETs and new SiC SBDs are designed with high repetitive unclamped inductive switching (UIS) capability at rated current, with no degradation or failures. The new SiC MOSFETs maintain high UIS capability at approximately 10-15 Joule per square centimeter (J/cm2) and robust short circuit protection at 3-5 microseconds. The company’s SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, its SiC MOSFET and SiC SBD die can be paired together for use in modules.
Extremely Low Switching Losses – Zero reverse recovery charge improves system efficiency
High Power Density – Smaller footprint device reduces system size and weight
High Thermal Conductivity – 2.5x more thermally conductive than silicon
Reduced Sink Requirements – Results in lower cost and smaller size
High Temperature Operation – Increased power density and improved reliability
More on Silicon Carbide (SiC) semiconductors.
I welcome your thoughts; connect with me on LinkedIn.
Leave a Reply
You must be logged in to post a comment.